AP30P10GP-HF说明书PDF资料供应代理A-POWER-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
AP30P10GP-HF	文件：99.79 Kbytes Page：4 Pages	N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：99.79 Kbytes 页数：4 Pages	A-POWER 富鼎先进电子	A-POWER
AP30P10GP-HF_14	文件：99.79 Kbytes Page：4 Pages	Simple Drive Requirement 文件：99.79 Kbytes 页数：4 Pages	A-POWER 富鼎先进电子	A-POWER
AP30P10GP-HF_16	文件：54.81 Kbytes Page：5 Pages	Fast Switching Characteristic 文件：54.81 Kbytes 页数：5 Pages	A-POWER 富鼎先进电子	A-POWER
AP30P10GS	文件：99.27 Kbytes Page：4 Pages	N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：99.27 Kbytes 页数：4 Pages	A-POWER 富鼎先进电子	A-POWER
CED30P10	文件：423.18 Kbytes Page：4 Pages	P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -100V, -30A, RDS(ON) = 76mΩ @VGS = -10V. RDS(ON) = 92mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件：423.18 Kbytes 页数：4 Pages	CET 华瑞	CET
CED30P10	文件：788.27 Kbytes Page：4 Pages	P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -27A, RDS(ON) = 76mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 92mW @VGS = -4.5V. 文件：788.27 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS

更多AP30P10GP-HF供应商更新时间2026-2-9 9:01:00