首页 >AP2311GK其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
P-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
60VP-ChannelPowerMOSFET Application Load/PowerSwitching InterfacingSwitching LogicLevelShift | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | TECHPUBLIC | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
SimpleDriveRequirement,SmallPackageOutline | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
2.0ASINGLECHANNELCURRENT-LIMITEDPOWERSWITCH | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
2.0ASINGLECHANNELCURRENT-LIMITEDPOWERSWITCH | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
Plastic-EncapsulateMOSFETS GENERALDESCRIPTION DS(on) TheBCL2311DWusesadvancedtrenchtechnologytoprovideexcellentRandlowgatecharge. ThecomplementaryMOSFETSformahigh-speedpowerinverterandsuitableforamultitudeofapplications. | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI | ||
Single-ChannelUltra-FastGateDriverForAutomotive Features ◼AEC-Q100Qualified(Note1) ◼GateDriverVoltageRange4.5Vto5.5V ◼MinimumInputPulseWidth1.25ns(220pFload) ◼TypicalRiseTime0.65ns(220pFload) ◼TypicalFallTime0.70ns(220pFload) ◼Built-inUndervoltageLockout(UVLO)betweenVCC andGND ◼Invertingand | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-20V,-3.5A,RDS(ON)=85mΩ@VGS=-4.5V. RDS(ON)=130mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TSOP-6package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET |
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