丝印：LA；Package：DFN-1.5x2-6；300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features - Wide Operating Voltage: 1.8V to 6V - High Output Voltage Accuracy: ±2 - High Ripple Rejection: 65dB@ f = 1kHz, 45dB@ f = 10kHz - Low Standby Current: 0.1μA - Low Quiescent Current: 60μA Typical - Low Output Noise: 60μVrms - Short Current Limit: 50mA - Over Temperature Protection

文件：417.88 Kbytes 页数：13 Pages

DIODES

美台半导体

丝印：MA；Package：DFN-1.5x2-6；300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features - Wide Operating Voltage: 1.8V to 6V - High Output Voltage Accuracy: ±2 - High Ripple Rejection: 65dB@ f = 1kHz, 45dB@ f = 10kHz - Low Standby Current: 0.1μA - Low Quiescent Current: 60μA Typical - Low Output Noise: 60μVrms - Short Current Limit: 50mA - Over Temperature Protection

文件：417.88 Kbytes 页数：13 Pages

DIODES

美台半导体

丝印：LB；Package：DFN-1.5x2-6；300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features - Wide Operating Voltage: 1.8V to 6V - High Output Voltage Accuracy: ±2 - High Ripple Rejection: 65dB@ f = 1kHz, 45dB@ f = 10kHz - Low Standby Current: 0.1μA - Low Quiescent Current: 60μA Typical - Low Output Noise: 60μVrms - Short Current Limit: 50mA - Over Temperature Protection

文件：417.88 Kbytes 页数：13 Pages

DIODES

美台半导体

丝印：MB；Package：DFN-1.5x2-6；300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features - Wide Operating Voltage: 1.8V to 6V - High Output Voltage Accuracy: ±2 - High Ripple Rejection: 65dB@ f = 1kHz, 45dB@ f = 10kHz - Low Standby Current: 0.1μA - Low Quiescent Current: 60μA Typical - Low Output Noise: 60μVrms - Short Current Limit: 50mA - Over Temperature Protection

文件：417.88 Kbytes 页数：13 Pages

DIODES

美台半导体

丝印：LC；Package：DFN-1.5x2-6；300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features - Wide Operating Voltage: 1.8V to 6V - High Output Voltage Accuracy: ±2 - High Ripple Rejection: 65dB@ f = 1kHz, 45dB@ f = 10kHz - Low Standby Current: 0.1μA - Low Quiescent Current: 60μA Typical - Low Output Noise: 60μVrms - Short Current Limit: 50mA - Over Temperature Protection

文件：417.88 Kbytes 页数：13 Pages

DIODES

美台半导体

丝印：MC；Package：DFN-1.5x2-6；300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features - Wide Operating Voltage: 1.8V to 6V - High Output Voltage Accuracy: ±2 - High Ripple Rejection: 65dB@ f = 1kHz, 45dB@ f = 10kHz - Low Standby Current: 0.1μA - Low Quiescent Current: 60μA Typical - Low Output Noise: 60μVrms - Short Current Limit: 50mA - Over Temperature Protection

文件：417.88 Kbytes 页数：13 Pages

DIODES

美台半导体

丝印：LD；Package：DFN-1.5x2-6；300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features - Wide Operating Voltage: 1.8V to 6V - High Output Voltage Accuracy: ±2 - High Ripple Rejection: 65dB@ f = 1kHz, 45dB@ f = 10kHz - Low Standby Current: 0.1μA - Low Quiescent Current: 60μA Typical - Low Output Noise: 60μVrms - Short Current Limit: 50mA - Over Temperature Protection

文件：417.88 Kbytes 页数：13 Pages

DIODES

美台半导体

丝印：GEK；Package：SOT-23-5；300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features - Wide Operating Voltage: 1.8V to 6V - High Output Voltage Accuracy: ±2 - High Ripple Rejection: 65dB@ f = 1kHz, 45dB@ f = 10kHz - Low Standby Current: 0.1μA - Low Quiescent Current: 60μA Typical - Low Output Noise: 60μVrms - Short Current Limit: 50mA - Over Temperature Protection

文件：417.88 Kbytes 页数：13 Pages

DIODES

美台半导体

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

General Description The AP2129 is a 300mA, positive Voltage regulator ICs fabricated by CMOS process. The AP2129 provides two kinds of output voltage operation modes for setting the output voltage. Fixed output voltage mode senses the output voltage on VOUT, adjustable output voltage mode needs t

文件：516.52 Kbytes 页数：15 Pages

BCDSEMI

新进半导体

丝印：GEL；Package：SOT-23-5；300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features - Wide Operating Voltage: 1.8V to 6V - High Output Voltage Accuracy: ±2 - High Ripple Rejection: 65dB@ f = 1kHz, 45dB@ f = 10kHz - Low Standby Current: 0.1μA - Low Quiescent Current: 60μA Typical - Low Output Noise: 60μVrms - Short Current Limit: 50mA - Over Temperature Protection

文件：417.88 Kbytes 页数：13 Pages

DIODES

美台半导体