60V N-Channel Enhancement Mode MOSFET

AP20N06D采用先进的沟道技术，提供出色的RDS（ON），低栅极电荷和栅极电压低至1.8V的操作。该器件适用于负载开关或PWM应用。 VDS = 60V，ID = 20A \nRDS（ON）<28mΩ\n@ V GS =10V RDS（ON）<35mΩ\n@ V GS = 4.5V 高功率和电流处理能力\n无铅产品\nTO-252表贴封装;

APM

永源微

MOSFET

APM

永源微

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：86.42 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：417.98 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 20A, RDS(ON) = 55mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：124.65 Kbytes 页数：4 Pages

CET

华瑞