丝印：AP20N06DF；Package：PDFN3X3-8L；60V N-Channel Enhancement Mode MOSFET

Features - VDS = 60V ID =28A - RDS(ON)

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APME

永源微电子

MOSFET

APM

永源微

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand highenergy in the avalancheand commutation modes. This new energy efficient design also offers a drain–to–source diode with

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MOTOROLA

摩托罗拉

TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

文件：293.47 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS V™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50

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MOTOROLA

摩托罗拉