2.0x1.25mm SMD CHIP LED LAMP

Description The Blue source color devices are made with InGaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS. It is recommended to use a wrist band or anti-electrostatic glove when handling the LEDs. All devices, equipment and machinery must be electrically grounded.

文件：158.45 Kbytes 页数：5 Pages

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2.0x1.25mm SMD CHIP LED LAMP

Description The Super Bright Orange device is made with DH InGaAlP (on GaAs substrate) light emitting diode chip. Features ● 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. ● LOW POWER CONSUMPTION. ● WIDE VIEWING ANGLE. ● IDEAL FOR BACKLIGHT AND INDICATOR. ● VARIOUS COLORS AND LENS TYPES AVAILABLE.

文件：127.72 Kbytes 页数：4 Pages

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2.0x1.25mm SMD CHIP LED LAMP

Description The Super Bright Orange source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. Features ● 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. ● LOW POWER CONSUMPTION. ● WIDE VIEWING ANGLE. ● IDEAL FOR BACKLIGHT AND INDICATOR. ● VARIOUS COLORS AND LENS TYPES AVAI

文件：120.39 Kbytes 页数：4 Pages

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2.0x1.25mm INFRA-RED EMITTING DIODE

Description SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. Features ● 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. ● MECHANICALLY AND SPECTRALLY MATCHED TO THE PHOTOTRANSISTOR. ● WATER CLEAR LENS. ● PACKAGE: 2000PCS / REEL. ● RoHS COMPLIANT.

文件：116.2 Kbytes 页数：4 Pages

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2.0x1.25mm INFRARED EMITTING DIODE

Description SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. Features ● 2.0mmx1.25mm SMD LED,1.1mm thickness. ● Mechanically and spectrally matched to the phototransistor. ● Package: 2000pcs / reel. ● Moisture sensitivity level : level 3. ● RoHS compliant.

文件：1.25939 Mbytes 页数：5 Pages

TO-GRACE

至恩科技

2.0 x 1.25 mm Infrared Emitting Diode

DESCRIPTION ● SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes FEATURES ● 2.0 mm x 1.25 mm SMD LED, 1.1 mm thickness ● Mechanically and spectrally matched to the phototransistor ● Package : 2000 pcs / reel ● Moisture sensitivity level: 3 ● RoHS compliant APPLICATIONS ● Inf

文件：1.02567 Mbytes 页数：4 Pages

TO-GRACE

至恩科技

2.0 x 1.25 mm Infrared Emitting Diode

DESCRIPTION ● SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. FEATURES ● 2.0 mm x 1.25 mm SMD LED, 1.1 mm thickness ● Mechanically and spectrally matched to the phototransistor ● Package : 2000 pcs / reel ● Moisture sensitivity level: 3 ● RoHS compliant APPLICATIONS ● In

文件：645.49 Kbytes 页数：4 Pages

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2.0 X 1.2MM SMD CHIP LED LAMP

Description The Super Bright Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. Features ● 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. ● LOW POWER CONSUMPTION. ● WIDE VIEWING ANGLE. ● IDEAL FOR BACKLIGHT AND INDICATOR. ● VARIOUS COLORS AND LENS TYPES AVAILABLE.

文件：92.83 Kbytes 页数：4 Pages

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2.0x1.25mm SMD CHIP LED LAMP

Description The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode. Features ● 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. ● LOW POWER CONSUMPTION. ● WIDE VIEWING ANGLE. ● IDEAL FOR BACKLIGHT AND INDICATOR. ● VARIOUS COLORS AND LENS TYPES AVAILA

文件：118.28 Kbytes 页数：4 Pages

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今台电子

2.0x1.25mm SMD CHIP LED LAMP

Description The Hyper Red source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. Features ● 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. ● LOW POWER CONSUMPTION. ● WIDE VIEWING ANGLE. ● IDEAL FOR BACKLIGHT AND INDICATOR. ● VARIOUS COLORS AND LENS TYPES AVAILABLE. ●

文件：125.46 Kbytes 页数：4 Pages

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