AP201208-ATC3

SMD Type Amber Emitter

Features Topview0805package ViewingAngle=70 Compatiblewithinfraredandvaporphasereflow solderprocess Highreliability UltrabrightAmber RoHScompliance Applications Opticalindicator. SwitchandSymbolDisplay. Description TheAP201208-ATC3isanAIln

AP2012EC

2.0 X 1.2 mm SMD CHIP LED LAMP

Description TheHighEfficiencyRedsourcecolordevicesaremadewithGalliumArsenidePhosphideonGalliumPhosphideOrangeLightEmittingDiode. Features ●2.0mmx1.25mmSMTLED,1.1mmTHICKNESS. ●LOWPOWERCONSUMPTION. ●WIDEVIEWINGANGLE. ●IDEALFORBACKLIGHTANDINDICATOR. ●VARIOUS

AP2012F3C

2.0x1.25mm INFRA-RED EMITTING DIODE

Description F3MadewithGalliumArsenideInfraredEmittingdiodes. Features ●2.0mmx1.25mmSMTLED,1.1mmTHICKNESS. ●MECHANICALLYANDSPECTRALLYMATCHEDTOTHEPHOTOTRANSISTOR. ●WATERCLEARLENS. ●PACKAGE:2000PCS/REEL. ●RoHSCOMPLIANT.

AP2012MBC

2.0x1.25mm SMD CHIP LED LAMP

Description TheBluesourcecolordevicesaremadewithGaNonSiCLightEmittingDiode. StaticelectricityandsurgedamagetheLEDS. Itisrecommendedtouseawristbandoranti-electrostaticglovewhenhandlingtheLEDs. Alldevices,equipmentandmachinerymustbeelectricallygrounded.

AP2012MGC

2.0x1.25mm SMD CHIP LED LAMP

Description TheMegaGreensourcecolordevicesaremadewithDHInGaAlPonGaAssubstrateLightEmittingDiode. Features ●2.0mmx1.25mmSMTLED,1.1mmTHICKNESS. ●LOWPOWERCONSUMPTION. ●WIDEVIEWINGANGLE. ●IDEALFORBACKLIGHTANDINDICATOR. ●VARIOUSCOLORSANDLENSTYPESAVAILABLE. ●

AP2012P3C

PHOTOTRANSISTOR

Description MadewithNPNsiliconphototransistorchips. Features ●MECHANICALLYANDSPECTRALLYMATCHEDTOTHEAP2012SERIESINFRAREDEMITTINGLEDLAMP. ●WATERCLEARLENS. ●PACKAGE:2000PCS/REEL. ●RoHSCOMPLIANT.

AP2012P3C-P22

2.0 x 1.25 mm Phototransistor

DESCRIPTION ●MadewithNPNsiliconphototransistorchips FEATURES ●2.0mmx1.25mmSMDLED,1.1mmthickness ●MechanicallyandspectrallymatchedtotheinfraredemittingLEDlamp ●Waterclearlens ●Package:2000pcs/reel ●Moisturesensitivitylevel:3 ●RoHScompliant APPLICATIO

AP2012PBC/A

2.0x1.25mm SMD CHIP LED LAMP

Description TheBluesourcecolordevicesaremadewithInGaNonSiCLightEmittingDiode. StaticelectricityandsurgedamagetheLEDS. Itisrecommendedtouseawristbandoranti-electrostaticglovewhenhandlingtheLEDs. Alldevices,equipmentandmachinerymustbeelectricallygrounded.

AP2012PBC-A

2.0x1.25mm SMD CHIP LED LAMP

Description TheBluesourcecolordevicesaremadewithInGaNonSiCLightEmittingDiode. StaticelectricityandsurgedamagetheLEDS. Itisrecommendedtouseawristbandoranti-electrostaticglovewhenhandlingtheLEDs. Alldevices,equipmentandmachinerymustbeelectricallygrounded.

AP2012SEC

2.0x1.25mm SMD CHIP LED LAMP

Description TheSuperBrightOrangedeviceismadewithDHInGaAlP(onGaAssubstrate)lightemittingdiodechip. Features ●2.0mmx1.25mmSMTLED,1.1mmTHICKNESS. ●LOWPOWERCONSUMPTION. ●WIDEVIEWINGANGLE. ●IDEALFORBACKLIGHTANDINDICATOR. ●VARIOUSCOLORSANDLENSTYPESAVAILABLE.

AP2012SECK

2.0x1.25mm SMD CHIP LED LAMP

Description TheSuperBrightOrangesourcecolordevicesaremadewithDHInGaAlPonGaAssubstrateLightEmittingDiode. Features ●2.0mmx1.25mmSMTLED,1.1mmTHICKNESS. ●LOWPOWERCONSUMPTION. ●WIDEVIEWINGANGLE. ●IDEALFORBACKLIGHTANDINDICATOR. ●VARIOUSCOLORSANDLENSTYPESAVAI

AP2012SF4C

2.0x1.25mm INFRA-RED EMITTING DIODE

Description SF4MadewithGalliumAluminumArsenideInfraredEmittingdiodes. Features ●2.0mmx1.25mmSMTLED,1.1mmTHICKNESS. ●MECHANICALLYANDSPECTRALLYMATCHEDTOTHEPHOTOTRANSISTOR. ●WATERCLEARLENS. ●PACKAGE:2000PCS/REEL. ●RoHSCOMPLIANT.

AP2012SF4C

2.0x1.25mm INFRARED EMITTING DIODE

Description SF4MadewithGalliumAluminumArsenideInfraredEmittingdiodes. Features ●2.0mmx1.25mmSMDLED,1.1mmthickness. ●Mechanicallyandspectrallymatchedtothephototransistor. ●Package:2000pcs/reel. ●Moisturesensitivitylevel:level3. ●RoHScompliant.

AP2012SF4C-P22

2.0 x 1.25 mm Infrared Emitting Diode

DESCRIPTION ●SF4MadewithGalliumAluminumArsenideInfraredEmittingdiodes. FEATURES ●2.0mmx1.25mmSMDLED,1.1mmthickness ●Mechanicallyandspectrallymatchedtothephototransistor ●Package:2000pcs/reel ●Moisturesensitivitylevel:3 ●RoHScompliant APPLICATIONS ●In

AP2012SF4C-P22

2.0 x 1.25 mm Infrared Emitting Diode

DESCRIPTION ●SF4MadewithGalliumAluminumArsenideInfraredEmittingdiodes FEATURES ●2.0mmx1.25mmSMDLED,1.1mmthickness ●Mechanicallyandspectrallymatchedtothephototransistor ●Package:2000pcs/reel ●Moisturesensitivitylevel:3 ●RoHScompliant APPLICATIONS ●Inf

AP2012SGC

2.0 X 1.2MM SMD CHIP LED LAMP

Description TheSuperBrightGreensourcecolordevicesaremadewithGalliumPhosphideGreenLightEmittingDiode. Features ●2.0mmx1.25mmSMTLED,1.1mmTHICKNESS. ●LOWPOWERCONSUMPTION. ●WIDEVIEWINGANGLE. ●IDEALFORBACKLIGHTANDINDICATOR. ●VARIOUSCOLORSANDLENSTYPESAVAILABLE.

AP2012SRCPRV

2.0x1.25mm SMD CHIP LED LAMP

Description TheSuperBrightRedsourcecolordevicesaremadewithGalliumAluminumArsenideRedLightEmittingDiode. Features ●2.0mmx1.25mmSMTLED,1.1mmTHICKNESS. ●LOWPOWERCONSUMPTION. ●WIDEVIEWINGANGLE. ●IDEALFORBACKLIGHTANDINDICATOR. ●VARIOUSCOLORSANDLENSTYPESAVAILA

AP2012SURC

2.0x1.25mm SMD CHIP LED LAMP

Description TheHyperRedsourcecolordevicesaremadewithDHInGaAlPonGaAssubstrateLightEmittingDiode. Features ●2.0mmx1.25mmSMTLED,1.1mmTHICKNESS. ●LOWPOWERCONSUMPTION. ●WIDEVIEWINGANGLE. ●IDEALFORBACKLIGHTANDINDICATOR. ●VARIOUSCOLORSANDLENSTYPESAVAILABLE. ●

AP2012SURCK

2.0x1.25mm SMD CHIP LED LAMP

Description TheHyperRedsourcecolordevicesaremadewithDHInGaAlPonGaAssubstrateLightEmittingDiode. Features ●2.0mmx1.25mmSMTLED,1.1mmTHICKNESS. ●LOWPOWERCONSUMPTION. ●WIDEVIEWINGANGLE. ●IDEALFORBACKLIGHTANDINDICATOR. ●VARIOUSCOLORSANDLENSTYPESAVAILABLE. ●

AP2012SYC

2.0x1.25mm SMD CHIP LED LAMP

Description TheSuperBrightYellowdeviceismadewithDHInGaAlP(onGaAssubstrate)lightemittingdiodechip. Features ●2.0mmx1.25mmSMTLED,1.1mmTHICKNESS. ●LOWPOWERCONSUMPTION. ●WIDEVIEWINGANGLE. ●IDEALFORBACKLIGHTANDINDICATOR. ●VARIOUSCOLORSANDLENSTYPESAVAILABLE.