200V N-Channel Enhancement Mode MOSFET

Features - VDS = 200V ID =18A - RDS(ON)

文件：756.78 Kbytes 页数：6 Pages

APME

永源微电子

200V N-Channel Enhancement Mode MOSFET

Features - VDS = 200V ID =18A - RDS(ON)

文件：756.78 Kbytes 页数：6 Pages

APME

永源微电子

POWER FIELD EFFECT TRANSISTOR

文件：199.32 Kbytes 页数：8 Pages

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PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

文件：54.15 Kbytes 页数：7 Pages

PHI

PHI

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.145 Ω ■ AVALANCHERUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ VERY HIGH CURRENT CAPABILITY ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE I2PAK (TO-262) POWE

文件：126.95 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体