30V N-Channel Enhancement Mode MOSFET

Features - VDS = 30V ID =100A - RDS(ON)

文件：759.45 Kbytes 页数：7 Pages

APME

永源微电子

30V N-Channel Enhancement Mode MOSFET

AP100N03D采用先进的沟道技术，提供出色的RDS（ON），低栅极电荷和栅极电压低至1.8V的操作。该器件适用于负载开关或PWM应用。 VDS = 30V，ID = 100A \nRDS（ON）<4.5m\nΩ@ V GS = -2.5V RDS（ON）<6.5m\nΩ@ V GS = -4.5V 高功率和电流处理能力\n无铅产品\nTO-252表贴封装;

APM

永源微

N-CHANNEL 30V - 0.0045??- 80A - DPAK - IPAK Planar STripFET??MOSFET

Description This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore

文件：240.65 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ TrenchMOS™ technology ■ Low on-state resistance ■ Avalanche ruggedness rated ■ Logic level compatible ■ Surface mount package. Applications ■ DC to DC converters ■

文件：331.22 Kbytes 页数：13 Pages

PHI

PHI

Switching (30V, 짹10A)

Switching (30V, ±10A) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). Applications Power switching, DC/DC converter.

文件：59.93 Kbytes 页数：4 Pages

ROHM

罗姆