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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
GJ01N60	文件：238.52 Kbytes Page：5 Pages	N-CHANNELENHANCEMENTMODEPOWERMOSFET Description TheGJ01N60providethedesignerwiththebestcombinationoffastswitching. TheTO-252packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsand suitedforAC/DCconverters. Features Dynamicdv/dtRating SimpleDriveRequir	GTMGTM CORPORATION 勤益投资控股勤益投资控股股份有限公司	GTM
GM01N60D/U	文件：468.13 Kbytes Page：10 Pages	MinisizeofDiscretesemiconductorelements	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商	ETC1
GM01N60DSLASHU	文件：468.13 Kbytes Page：10 Pages	MinisizeofDiscretesemiconductorelements	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商	ETC1
H01N60	文件：59.92 Kbytes Page：5 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde	HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司	HSMC
H01N60I	文件：59.92 Kbytes Page：5 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde	HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司	HSMC
H01N60J	文件：59.92 Kbytes Page：5 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde	HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司	HSMC
H01N60S	文件：62.65 Kbytes Page：5 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde	HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司	HSMC
H01N60SI	文件：62.65 Kbytes Page：5 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde	HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司	HSMC
H01N60SJ	文件：62.65 Kbytes Page：5 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde	HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司	HSMC
M01N60	文件：174.41 Kbytes Page：5 Pages	NChannelMOSFET [STANSONTECHNOLOGY] RobustHighVoltageTemination. AvalancheEnergySpecified Source-toDrainDiodeRecoveryTimeComparabletoaDiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircurits IDSSandVDS(on)SpecifiedatElevatedTemperature	STANSON Stanson Technology	STANSON

详细参数

型号：
AP01N60H
制造商：
A-POWER
制造商全称：
Advanced Power Electronics Corp.
功能描述：
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市坤融电子科技有限公司	AP01N60H	APEC/富鼎	24+	TO-252	11000	只做原厂渠道可追溯货源	询价
深圳市粤科源兴科技有限公司	AP01N60H	APEC	13+	NA	37238	原装分销	询价
齐创科技(上海,北京,青岛)有限公司	AP01N60H	SR	23+	TO252-2	5000	原装正品,假一罚十	询价
深圳市一线半导体有限公司	AP01N60H	AP	24+	TO-252	78000		询价
深圳市勤思达科技有限公司	AP01N60H	APEC	12+	TO-252	15000	全新原装,绝对正品,公司现货供应。	询价
深圳市卓越微芯电子有限公司	AP01N60H	AP/富鼎	2020+	SOT252	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市科恒伟业电子有限公司	AP01N60H	APEC富鼎	1816+	.	6523	科恒伟业!只做原装正品,假一赔十!	询价
深圳市壹芯创科技有限公司	AP01N60H	富鼎	22+	SO-8	8200	原装现货库存.价格优势!!	询价
深圳市华来深电子有限公司	AP01N60H	APEC富鼎	23+	TO-252	8650	受权代理!全新原装现货特价热卖!	询价
深圳市宇集芯电子有限公司	AP01N60H	APEC	24+	TO-252	90000	一级代理商进口原装现货、价格合理	询价

更多AP01N60H供应商更新时间2025-6-3 16:36:00

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