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FDB14N30

300VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB14N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDB14N30TM

300VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP14N30

300VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDPF14N30

300VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDPF14N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDPF14N30T

N-ChannelUniFETMOSFET300V,14A,290m

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQA14N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQA14N30

300VN-ChannelMOSFET

300VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQAF14N30

300VN-ChannelMOSFET

300VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQAF14N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=11.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQB14N30

300VN-ChannelMOSFET

Features •14.4A,300V,RDS(on)=0.29Ω@VGS=10V •Lowgatecharge(typical30nC) •LowCrss(typical23pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •RoHSCompliant

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB14N30TM

300VN-CHANNELMOSFET

Features •14.4A,300V,RDS(on)=0.29Ω@VGS=10V •Lowgatecharge(typical30nC) •LowCrss(typical23pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •RoHSCompliant

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQI14N30

300VN-ChannelMOSFET

Features •14.4A,300V,RDS(on)=0.29Ω@VGS=10V •Lowgatecharge(typical30nC) •LowCrss(typical23pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •RoHSCompliant

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP14N30

300VN-ChannelMOSFET

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP14N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14.4A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.29Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQPF14N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8.5A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.29Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQPF14N30

300VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

KSM14N30

300VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

供应商型号品牌批号封装库存备注价格
AOS/万代
2021+
TP-220
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
AOS
TO-220
20000
原装正品
询价
VB
2019
TO220
55000
绝对原装正品假一罚十!
询价
AOS万代
23+
TO-TO-220
12300
全新原装真实库存含13点增值税票!
询价
AOS万代
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
询价
AOS
21+
TO-220
35200
一级代理/放心采购
询价
AOS
23+
TO-220铁头
30000
代理全新原装现货,价格优势
询价
AOS/万代
23+
TO-220
24190
原装正品代理渠道价格优势
询价
AOSMD
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
AOS/万代
21+
TO-220
330000
优势供应 实单必成 可13点增值税
询价
更多AOT14N30供应商 更新时间2024-6-21 9:30:00