首页 >AON6405MOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
12/24VSYSTEMPOWERSUPPLYIC | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | Atmel | ||
FanlessCompactEmbeddedComputerwithIntel®Celeron/Pentium™Processor Features ■SlimBoxerDesign:37mm ■RichI/O,DesignforAutoSystemControl ■WideOperatingTemperature-20°C~60°C ■GigabitEthernetx2,USBx4 ■SupportWallmount | AAEONAAEON Technology 研扬科技研扬科技（苏州）有限公司 | AAEON | ||
FanlessCompactEmbeddedComputerwithIntel®Celeron®/Pentium®Processor Features ■SlimBoxerDesign:42mm ■RichI/O,DesignforAutoSystemControl ■WideOperatingTemperature-20°C~60°C ■GigabitEthernetx2,USBx4 ■SupportWallmount | AAEONAAEON Technology 研扬科技研扬科技（苏州）有限公司 | AAEON | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-22A,RDS(ON)=46mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=60mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-20A,RDS(ON)=48mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=62mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-5.7A,RDS(ON)=48mW@VGS=-10V. RDS(ON)=68mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-22A,RDS(ON)=46mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=60mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-20A,RDS(ON)=48mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=62mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-21A,RDS(ON)=48mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=62mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-17A,RDS(ON)=48mW@VGS=-10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=65mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS |
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