IRF7413PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF7413QPBF

HEXFETPowerMOSFET

Description TheseHEXFET®PowerMOSFETsinSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveaval

IRF7413TR

GenerationVTechnology

GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Application Features VDS(V)=30V RDS(ON)12m(VGS=10V) RDS(ON)17m(VGS=4.5V)

IRF7413TR

MOSFET

Application GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Features VDS(V)=30V RDS(ON)

IRF7413TR

UltraLowOn-Resistance

SMPSMOSFET Benefits •LowGatetoDrainChargetoReduce SwitchingLosses •FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) •FullyCharacterizedAvalancheVoltage andCurrent Applications •HighfrequencyDC-DCconverters

IRF7413TRPBF

N-Channel20V(D-S)MOSFET

IRF7413TRPBF

fastsuitching

IRF7413TRPBF-TP

N-ChannelEnhancementModePowerMOSFET

GENERALFEATURES ©Vo=30Vlo124 Rosin

IRF7413Z

30VN-ChannelMOSFET

Application GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Features VDS(V)=30V RDS(ON)

IRF7413Z

HEXFETPowerMOSFET

Benefits ●Ultra-LowGateImpedance ●VeryLowRDS(on) ●FullyCharacterizedAvalancheVoltageandCurrent ●100TestedforRG Applications ●ControlFETforNotebookProcessorPower ●ControlandSynchronousRectifier MOSFETforGraphicsCardsandPOL ConvertersinComputing,Netwo