HM6409

P-ChannelEnhancementModePowerMOSFET

Description TheHM6409usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. Features ●VDS=-20V,ID=-5.0A RDS(ON)

HM6409AE

20VP-ChannelEnhancement-ModeMOSFET

VDS=-20V RDS(ON),Vgs@-1.8V,Ids@-2.0A=73mΩ RDS(ON),Vgs@-2.5V,Ids@-4.0A=54mΩ RDS(ON),Vgs@-4.5V,Ids@-5.5A=43mΩ Features Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance PackageDimensions

L6409-G

MR11andMR16HalogenLampswithGoldCoatedReflectors

HighIntensityInfraredSource SeverallampsinourMR11andMR16seriesarenowavailablewithgoldcoatedreflectors.Thislayerofgoldprovidesforincreasedemissionintheinfrared. ApplicationsincludeopenfieldIRgasdetection,localinfraredheatingandremotetestingofflamedetect

LTC6409

10GHzGBW,1.1nV/HzDifferentialAmplifier/ADCDriver

LTC6409

DifferentialAmplifier/ADCDriver

LTC6409

300MHzDigitalPredistortionReceiver

LTC6409

Dual14-Bit250Msps

LTC6409

Dual12-Bit310MspsADC

LTC6409

280MHz,2.9nsComparatorFamilywithRail-to-RailInputsandCMOSOutputs

LTC6409

1.6GHzLowNoiseHighLinearityDifferentialBuffer/16-BitADCDriverwithFastClamp