P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-3 A (VGS =-4.5V) ● RDS(ON)

文件：2.32577 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel MOSFET

文件：2.35514 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -20V ID = -3 A RDS(ON)

文件：222.36 Kbytes 页数：6 Pages

AOSMD

万国半导体

20V P-Channel MOSFET

文件：462.36 Kbytes 页数：5 Pages

AOSMD

万国半导体

Monolithic IGs

Monolithic IGs ICs for Audio Applications • CD Amplifiers • Low-Frequency, Small-Signal Amplifiers

文件：121.4 Kbytes 页数：3 Pages

ROHM

罗姆