丝印：AD**；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -20V ID = -3 A RDS(ON)

文件：222.36 Kbytes 页数：6 Pages

AOSMD

万国半导体

丝印：AD**；Package：SOT-23；20V P-Channel MOSFET

文件：462.36 Kbytes 页数：5 Pages

AOSMD

万国半导体

Monolithic IGs

Monolithic IGs ICs for Audio Applications • CD Amplifiers • Low-Frequency, Small-Signal Amplifiers

文件：121.4 Kbytes 页数：3 Pages

ROHM

罗姆

Monolithic IGs

Monolithic IGs ICs for Audio Applications • CD Amplifiers • Low-Frequency, Small-Signal Amplifiers

文件：121.4 Kbytes 页数：3 Pages

ROHM

罗姆

P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 3.5 Ampere FEATURE * Small flat package. (SC-88 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：207.01 Kbytes 页数：2 Pages

CHENMKO

力勤