首页 >AO3407AL>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
P-ChannelMOSFET Features ●VDS(V)=-30V ●ID=-4.1A ●RDS(ON)52m(VGS=-10V) ●RDS(ON)87m(VGS=-4.5V) ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
P-ChannelMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
HIGHEFFICIENCYSYNCHRONOUSDC-DCBUCKCONVERTER | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
1.2A,1.4MHzHighEfficiencySynchronousDC-DCBuckConverter | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | BCDSEMI | ||
Plastic-EncapsulateMOSFETS GeneralDescription TheBC3407usesadvancedtrenchtechnologytoprovideexcellent RDS(on)withlowgatecharge.Thisdeviceissuitableforuseasaload switchorinPWMapplications. | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI | ||
Plastic-EncapsulateMOSFETS GeneralDescription -CARforautomotiveandotherapplicationsrequiringuniquesiteand AEC-Q101qualifiedandPPAPcapable. TheBC3407usesadvancedtrenchtechnologytoprovideexcellentRDS(on)withlowgatecharge. ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI | ||
Plastic-EncapsulateMOSFETS GeneralDescription TheBCL3407DWusesadvancedtrenchtechnologytoprovideexcellentRDS(on)withlowgatecharge. ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI | ||
P-ChannelEnhancementModePowerMOSFET | BellingSHANGHAI BELLING CO., LTD. 上海贝岭上海贝岭股份有限公司 | Belling | ||
P-Channel30V(D-S)4AP-MOSFET | booklyBookly Micro electronic 百力微电子上海百力微电子股份有限公司 | bookly | ||
DualP-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-30V,-5.1A,RDS(ON)=48mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. RDS(ON)=115mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET |
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