LOW POWER LOW OFFSET VOLTAGE QUAD COMPARATORS

DESCRIPTION The AO339V consist of four independent precision voltage comparators with a typical offset voltage of 2.0mV and high gain. They are specifically designed to operate from a single power supply over wide range of voltages. Operation from split power supply is also possible and the low

文件：840.75 Kbytes 页数：10 Pages

AITSEMI

创瑞科技

LOW POWER LOW OFFSET VOLTAGE QUAD COMPARATORS

DESCRIPTION The AO339V consist of four independent precision voltage comparators with a typical offset voltage of 2.0mV and high gain. They are specifically designed to operate from a single power supply over wide range of voltages. Operation from split power supply is also possible and the low

文件：840.75 Kbytes 页数：10 Pages

AITSEMI

创瑞科技

LOW POWER LOW OFFSET VOLTAGE QUAD COMPARATORS

DESCRIPTION The AO339V consist of four independent precision voltage comparators with a typical offset voltage of 2.0mV and high gain. They are specifically designed to operate from a single power supply over wide range of voltages. Operation from split power supply is also possible and the low

文件：840.75 Kbytes 页数：10 Pages

AITSEMI

创瑞科技

N-Channel Enhancement MOSFET

Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON)

文件：1.32943 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：A0**；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400 is Pb-free (meets ROHS & Sony 259 spec

文件：110.54 Kbytes 页数：4 Pages

AOSMD

万国半导体

30V N-Channel Enhancement Mode MOSFET

30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A

文件：1.85432 Mbytes 页数：3 Pages

HTSEMI

金誉半导体

N-Channel enhancement mode field effect transistor

■ Features ● VDS (V) = 30V ● ID = 5.8 A (VGS = 10V) ● RDS(ON) 28m (VGS = 10V) ● RDS(ON) 33m (VGS = 4.5V) ● RDS(ON) 52m (VGS = 2.5V)

文件：1.12086 Mbytes 页数：4 Pages

KEXIN

科信电子

N- CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N- CHANNEL MOSFET in a SOT-23 Plastic Package. Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON)

文件：776.06 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：1.02695 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：A0H；Package：SOT23-3L；N-Channel Enhancement MOSFET

Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) m (VGS = 10V) RDS(ON) 3 m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V)

文件：1.58615 Mbytes 页数：5 Pages

YFWDIODE

佑风微