首页 >ANX6923AAQ>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SimpleDriveRequirement,EasyforSynchronousBuckConverterApplication | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
P-CHANNELWITHSCHOTTKYDIODEPOWERMOSFET Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. ▼LowOn-Resistance ▼FastSwitchingCharacteristic ▼IncludedSchottkyDiode | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
Dual-ChannelLowNoiseAmplifier14GHz–17GHz Features ■Frequency:14GHz-17GHz ■Gain:19.5dB ■Noisefigure:1.5dB ■OutputP1dB:-1.5dBm ■Powerconsumption:16mW/ch ■Channelisolation:35dB ■Supplyvoltage:0.9V-1.0V ■Commonbiascontrolinput ■Compactsizeforplanarintegrationonλ/2grid ■2.7×2.7×0.9mm,23-pin | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
Dual-ChannelLowNoiseAmplifier13.75??17.3GHz | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
Dual-ChannelLowNoiseAmplifier13.75??17.3GHz | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
Dual-ChannelLowNoiseAmplifier14GHz–17GHz Features ■Frequency:14GHz-17GHz ■Gain:19.5dB ■Noisefigure:1.5dB ■OutputP1dB:-1.5dBm ■Powerconsumption:16mW/ch ■Channelisolation:35dB ■Supplyvoltage:0.9V-1.0V ■Commonbiascontrolinput ■Compactsizeforplanarintegrationonλ/2grid ■2.7×2.7×0.9mm,23-pin | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
Dual-ChannelLowNoiseAmplifier14GHz–17GHz Features ■Frequency:14GHz-17GHz ■Gain:19.5dB ■Noisefigure:1.5dB ■OutputP1dB:-1.5dBm ■Powerconsumption:16mW/ch ■Channelisolation:35dB ■Supplyvoltage:0.9V-1.0V ■Commonbiascontrolinput ■Compactsizeforplanarintegrationonλ/2grid ■2.7×2.7×0.9mm,23-pin | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
Dual-ChannelLowNoiseAmplifier13.75??17.3GHz | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
P-Channel2.5VSpecifiedPowerTrench??MOSFETwithSchottkyDiode | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-Channel2.5VSpecifiedPowerTrenchMOSFETwithSchottkyDiode GeneralDescription ThisP-Channel2.5VspecifiedMOSFETisaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.ItiscombinedwithalowforwarddropSchottkydiodewhichisisolatedfromtheMOSFET,providingacompactpowersolutionforasynchronousDC/DCconverter | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
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