Thin, programmable, non-contact magnetic position sensors capable of continuous rotation with dual outputs

文件：397.44 Kbytes 页数：2 Pages

ZFSWITCHES

采埃孚

Digital Potentiometers

文件：114.78 Kbytes 页数：7 Pages

COPAL

尼得科

丝印：AN9；Package：TSOT26；DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Backlighting DC-DC Converters Power Management Functions Fea

文件：436.8 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：AN9；Package：TSOT26；DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Backlighting DC-DC Converters Power Management Functions Fea

文件：436.8 Kbytes 页数：7 Pages

DIODES

美台半导体

The Use of QFETs in a Flyback Converter

Introduction Power supply designers face many challenges in designing more efficient and cost-effective power supplies. Efficiency is a major consideration in designing switching power supplies. Many factors in the design process such as the input filter capacitance, transformer core geometry and

文件：130.41 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

TRANSISTOR ARRAYS

Features ● Output Current : Io =25 mA ● Breakdown voltage : VCEO = 24 V ● Base current limiting resistor ● Built-in output breakdown voltage protection diode

文件：268.27 Kbytes 页数：7 Pages

PANASONIC

松下

TRANSISTOR ARRAYS

Features ● Output Current : Io =25 mA ● Breakdown voltage : VCEO = 24 V ● Base current limiting resistor ● Built-in output breakdown voltage protection diode

文件：268.27 Kbytes 页数：7 Pages

PANASONIC

松下

TRANSISTOR ARRAYS

Features ● Output Current : Io =25 mA ● Breakdown voltage : VCEO = 24 V ● Base current limiting resistor ● Built-in output breakdown voltage protection diode

文件：268.27 Kbytes 页数：7 Pages

PANASONIC

松下

TRANSISTOR ARRAYS

Features ● Output Current : Io =25 mA ● Breakdown voltage : VCEO = 24 V ● Base current limiting resistor ● Built-in output breakdown voltage protection diode

文件：268.27 Kbytes 页数：7 Pages

PANASONIC

松下

TRANSISTOR ARRAYS

Features ● Output Current : Io =25 mA ● Breakdown voltage : VCEO = 24 V ● Base current limiting resistor ● Built-in output breakdown voltage protection diode

文件：268.27 Kbytes 页数：7 Pages

PANASONIC

松下