丝印：AN9；Package：TSOT26；DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Backlighting DC-DC Converters Power Management Functions Fea

文件：436.8 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：AN9；Package：TSOT26；DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Backlighting DC-DC Converters Power Management Functions Fea

文件：436.8 Kbytes 页数：7 Pages

DIODES

美台半导体

The Use of QFETs in a Flyback Converter

Introduction Power supply designers face many challenges in designing more efficient and cost-effective power supplies. Efficiency is a major consideration in designing switching power supplies. Many factors in the design process such as the input filter capacitance, transformer core geometry and

文件：130.41 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

TRANSISTOR ARRAYS

Features ● Output Current : Io =25 mA ● Breakdown voltage : VCEO = 24 V ● Base current limiting resistor ● Built-in output breakdown voltage protection diode

文件：268.27 Kbytes 页数：7 Pages

Panasonic

松下

TRANSISTOR ARRAYS

Features ● Output Current : Io =25 mA ● Breakdown voltage : VCEO = 24 V ● Base current limiting resistor ● Built-in output breakdown voltage protection diode

文件：268.27 Kbytes 页数：7 Pages

Panasonic

松下

TRANSISTOR ARRAYS

Features ● Output Current : Io =25 mA ● Breakdown voltage : VCEO = 24 V ● Base current limiting resistor ● Built-in output breakdown voltage protection diode

文件：268.27 Kbytes 页数：7 Pages

Panasonic

松下

TRANSISTOR ARRAYS

Features ● Output Current : Io =25 mA ● Breakdown voltage : VCEO = 24 V ● Base current limiting resistor ● Built-in output breakdown voltage protection diode

文件：268.27 Kbytes 页数：7 Pages

Panasonic

松下

TRANSISTOR ARRAYS

Features ● Output Current : Io =25 mA ● Breakdown voltage : VCEO = 24 V ● Base current limiting resistor ● Built-in output breakdown voltage protection diode

文件：268.27 Kbytes 页数：7 Pages

Panasonic

松下

TRANSISTOR ARRAYS

Features ● Output Current : Io =25 mA ● Breakdown voltage : VCEO = 24 V ● Base current limiting resistor ● Built-in output breakdown voltage protection diode

文件：268.27 Kbytes 页数：7 Pages

Panasonic

松下

TRANSISTOR ARRAYS

Features ● Output Current : Io =25 mA ● Breakdown voltage : VCEO = 24 V ● Base current limiting resistor ● Built-in output breakdown voltage protection diode

文件：268.27 Kbytes 页数：7 Pages

Panasonic

松下