Storing data into the NDEF memory of M24SR

文件：396.63 Kbytes 页数：34 Pages

STMICROELECTRONICS

意法半导体

Storing data into the NDEF memory of M24SR

ST

意法半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4433 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard product AO4433 is Pb-free (meets ROHS

文件：489.51 Kbytes 页数：4 Pages

AOSMD

万国半导体

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • Load Switch • Battery Switch

文件：1.00258 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Lower Gate Charge, Simple Drive Requirement

文件：57.7 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子