ST16C452/552/553 APPLICATION EXAMPLE

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EXAR

艾科嘉

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD452 is Pb-free (meets ROHS & Sony 259 specifications). AOD

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AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 55A@ TC=25℃ ·Drain Source Voltage : VDSS= 25V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

N-Channel SDMOSTM POWER Transistor

General Description The AOD452A/L is fabricated with SDMOS trench technology that combines excellent RDS(ON)with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applicatio

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AOSMD

万国半导体