AN460

Using the P82B96 for bus interface

AN4602

This document is intended to guide in the usage of and to provide useful details related

AOD460

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD460usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOD460isPb-free(meetsROHS&Sony259specifications).AOD4

AOD460

N-Channel30-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU ​​​​​​​ APPLICATIONS •OR-ing •Server •DC/DC

AOD460

N-ChannelEnhancementModeFieldEffectTransistor

AOD460

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=25A@TC=25℃ ·DrainSourceVoltage :VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=14mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

AOD460L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD460usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOD460isPb-free(meetsROHS&Sony259specifications).AOD4

AOI460

N-Channel30-V(D-S)MOSFET

AOI460

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=53A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=70mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

AOT460

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOT460/LusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinUPS,highcurrentswitchingapplications. AOT460andAOT460Lareelectricallyidentical. -RoHSCompliant -HalogenFree Features