This document is intended to provide usage information

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STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 6A@ TC=25℃ • Drain Source Voltage- : VDSS=200V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.4Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot

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ISC

无锡固电

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=200V,ID=9A,RDS(ON)≤0.4Ω @VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high

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DOINGTER

杜因特

200V N-Channel MOSFET

General Description The AOD4504 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary

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AOSMD

万国半导体