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零件型号	下载订购	功能描述	制造商上传企业	LOGO
FDPF8N60ZUT	文件：323.33 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=6.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FIR8N60FG	文件：2.39378 Mbytes Page：8 Pages	600VN-ChannelMOSFET	FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司	FOSTER
FQB8N60C	文件：644.54 Kbytes Page：9 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB8N60C	文件：804.09 Kbytes Page：9 Pages	N-ChannelQFET짰MOSFET600V,7.5A,1.2廓 GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB8N60C	文件：294.02 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB8N60CF	文件：708.03 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB8N60CFTM	文件：708.03 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB8N60CTM	文件：804.09 Kbytes Page：9 Pages	N-ChannelQFET짰MOSFET600V,7.5A,1.2廓 GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI8N60C	文件：644.54 Kbytes Page：9 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI8N60C	文件：804.09 Kbytes Page：9 Pages	N-ChannelQFET짰MOSFET600V,7.5A,1.2廓 GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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技术参数

VDS_Max_V：
600
VGS_Max_V：
20
RDS(on)mOhm@VGS=10V：
1000
ID_Max_A：
15
QG_C：
36
PD_W：
300
Package：
TO-220

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市永贝尔科技有限公司	AM8T-0503SI	AIMTEC	23+	原厂原包	19960	只做进口原装终端工厂免费送样	询价
贸泽芯城（深圳）电子科技有限公司	AM8T-0503SIZ	AIMTEC	23+	DIP	67336	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市恒佳微电子有限公司	AM8T-0503SIZ	AIMTEC	2021+	DIP	11000	十年专营原装现货,假一赔十	询价
现代芯城（深圳）科技有限公司	AM8T-0512SIZ		24+	N/A	64000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市嵩宏达科技有限公司	AM8T-1203SZ	AIMTEC	24+	SIP	5000	全新原装,一手货源,全场热卖!	询价

更多AM8N60P供应商更新时间2025-7-29 8:02:00

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