MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM3415 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON) low gate charge and operation with gate voltage as 1.5V. This device is suitable for use as a load switch or i

文件：487.07 Kbytes 页数：8 Pages

AITSEMI

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SOT-23/SOT-23S 晶體管

AiT-Semi

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MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM3415A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. The AM3415A is available in SOT-23 package. FEATU

文件：838.02 Kbytes 页数：9 Pages

AITSEMI

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MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM3415A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. The AM3415A is available in SOT-23 package. FEATU

文件：838.02 Kbytes 页数：9 Pages

AITSEMI

创瑞科技

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM3415A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. The AM3415A is available in SOT-23 package. FEATU

文件：838.02 Kbytes 页数：9 Pages

AITSEMI

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MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION V DS 20V V GS =±8V ID(A)= 4 A R DS(ON) ON)=3 5 mΩ Typ ..) 4V5 R DS(ON )=45 mΩ Typ 2V5 R DS(ON) ON)=55 mΩ Typ ..) 1V8 R DS(ON) 70 mΩ Typ ..) 1V5 The AM3415B is available in SOT-23S package. FEATURES  ESD: 3 kv  Available in SOT-23S p ackage APPLICATIONS  Load Sw

文件：629.66 Kbytes 页数：6 Pages

AITSEMI

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MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION V DS 20V V GS =±8V ID(A)= 4 A R DS(ON) ON)=3 5 mΩ Typ ..) 4V5 R DS(ON )=45 mΩ Typ 2V5 R DS(ON) ON)=55 mΩ Typ ..) 1V8 R DS(ON) 70 mΩ Typ ..) 1V5 The AM3415B is available in SOT-23S package. FEATURES  ESD: 3 kv  Available in SOT-23S p ackage APPLICATIONS  Load Sw

文件：629.66 Kbytes 页数：6 Pages

AITSEMI

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MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION V DS 20V V GS =±8V ID(A)= 4 A R DS(ON) ON)=3 5 mΩ Typ ..) 4V5 R DS(ON )=45 mΩ Typ 2V5 R DS(ON) ON)=55 mΩ Typ ..) 1V8 R DS(ON) 70 mΩ Typ ..) 1V5 The AM3415B is available in SOT-23S package. FEATURES  ESD: 3 kv  Available in SOT-23S p ackage APPLICATIONS  Load Sw

文件：629.66 Kbytes 页数：6 Pages

AITSEMI

创瑞科技

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM3415 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON) low gate charge and operation with gate voltage as 1.5V. This device is suitable for use as a load switch or i

文件：487.07 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM3415 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON) low gate charge and operation with gate voltage as 1.5V. This device is suitable for use as a load switch or i

文件：487.07 Kbytes 页数：8 Pages

AITSEMI

创瑞科技