AM3415E3R中文资料创瑞科技数据手册PDF规格书

DESCRIPTION

The AM3415 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON) low gate charge and operation with gate voltage as 1.5V.

This device is suitable for use as a load switch or in applications.

The AM3415 is available in SOT-23 Package

FEATURES

 -20V/-4.0A, RDS(ON) =45mΩ(typ.)@VGS =-4.5V

 -20V/-4.0A, RDS(ON) =54mΩ(typ.)@VGS =-2.5V

 -20V/-2.0A, RDS(ON) =68mΩ(typ.)@VGS =-1.8V

 -20V/-1.0A, RDS(ON) =92mΩ(typ.)@VGS =-1.5V

 Super high density cell design for extremely low RDS(ON)

 Exceptional on-resistance and Maximum DC current capability

 ESD Protected : 3kV

 Available in SOT-23 package

APPLICATIONS

 Cellular/Portable

 Load Switch