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29LV800BE

8M(1Mx8/512Kx16)BIT

DESCRIPTION TheMBM29LV800TE/BEarea8M-bit,3.0V-onlyFlashmemoryorganizedas1Mbytesof8bitseachor512Kwordsof16bitseach.TheMBM29LV800TE/BEareofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackage.Thesedevicesaredesignedtobeprogrammedinasystemwithth

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

29LV800TE

8M(1Mx8/512Kx16)BIT

DESCRIPTION TheMBM29LV800TE/BEarea8M-bit,3.0V-onlyFlashmemoryorganizedas1Mbytesof8bitseachor512Kwordsof16bitseach.TheMBM29LV800TE/BEareofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackage.Thesedevicesaredesignedtobeprogrammedinasystemwithth

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

AM29LV800B

8Megabit(1Mx8-Bit/512Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AM29LV800B

8Megabit(1Mx8-Bit/512Kx16-Bit)CMOS3.0Volt-only,BootSectorFlashMemory-DieRevision2

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AM29LV800B

8Megabit(1Mx8-Bit/512Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV800Bisan8Mbit,3.0volt-onlyFlashmemoryorganizedas1,048,576bytesor524,288words.Thedeviceisofferedin48-ballFBGA,44-pinSO,and48-pinTSOPpackages.Theword-widedata(x16)appearsonDQ15–DQ0;thebyte-wide(x8)dataappearsonDQ7–DQ0.Thisdev

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AM29LV800D

8Megabit(1Mx8-Bit/512Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GeneralDescription TheAm29LV800Disan8Mbit,3.0volt-onlyFlashmemoryorganizedas1,048,576bytesor524,288words.Thedeviceisofferedin48-ballFBGA,44-pinSO,and48-pinTSOPpackages.Formoreinformation,refertopublicationnumber21536.Theword-widedata(x16)appearsonDQ1

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AM29LV800T

8Megabit(1,048,576x8-Bit/524,288x16-Bit)CMOS3.0Volt-only,SectoredFlashMemory

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AS29LV800

3V1M횞8/512K횞16CMOSFlashEEPROM

Functionaldescription TheAS29LV800isan8megabit,3.0voltFlashmemoryorganizedas1Megabyteof8bits/512Kbytesof16bitseach.Forflexibleeraseandprogramcapability,the8megabitsofdataisdividedintonineteensectors:one16K,two8K,one32K,andfifteen64kbytesectors;or

ANADIGICS

ANADIGICS

EN29LV800

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV800isan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin10µs.TheEN29LV800features3.0Vvoltagereadandwriteoperation,withaccesstimesasfastas5

EON

Eon Silicon Solution Inc.

EN29LV800A

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5

EON

Eon Silicon Solution Inc.

EN29LV800B

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

EON

Eon Silicon Solution Inc.

EN29LV800C

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemory

GENERALDESCRIPTION TheEN29LV800Cisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Cfeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas7

EON

Eon Silicon Solution Inc.

ES29LV800D

8Mbit(1Mx8/512Kx16)CMOS3.0Volt-only,BootSectorFlashMemory

EXCELSEMIExcel Semiconductor Inc.

Excel Semiconductor Inc.

ES29LV800E

8Mbit(1Mx8/512Kx16)CMOS3.0Volt-only,BootSectorFlashMemory

EXCELSEMIExcel Semiconductor Inc.

Excel Semiconductor Inc.

HY29LV800

8Mbit(1Mx8/512Kx16)LowVoltageFlashMemory

HynixHynix Semiconductor

SK海力士海力士半导体

M29LV800B

8Megabit(1Mx8-Bit/512Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV800Bisan8Mbit,3.0volt-onlyFlashmemoryorganizedas1,048,576bytesor524,288words.Thedeviceisofferedin48-ballFBGA,44-pinSO,and48-pinTSOPpackages.Theword-widedata(x16)appearsonDQ15–DQ0;thebyte-wide(x8)dataappearsonDQ7–DQ0.Thisdev

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

MBM29LV800BA

8M(1MX8/512KX16)BIT

■GENERALDESCRIPTION TheMBM29LV800TA/BAarea8M-bit,3.0V-onlyFlashmemoryorganizedas1Mbytesof8bitseachor512Kwordsof16bitseach.TheMBM29LV800TA/BAareofferedina48-pinTSOP(I),44-pinSOP,and48-ballFBGApackages.Thesedevicesaredesignedtobeprogrammedin-systemwit

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

MBM29LV800BE

8M(1Mx8/512Kx16)BIT

DESCRIPTION TheMBM29LV800TE/BEarea8M-bit,3.0V-onlyFlashmemoryorganizedas1Mbytesof8bitseachor512Kwordsof16bitseach.TheMBM29LV800TE/BEareofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackage.Thesedevicesaredesignedtobeprogrammedinasystemwithth

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

MBM29LV800TA

8M(1MX8/512KX16)BIT

■GENERALDESCRIPTION TheMBM29LV800TA/BAarea8M-bit,3.0V-onlyFlashmemoryorganizedas1Mbytesof8bitseachor512Kwordsof16bitseach.TheMBM29LV800TA/BAareofferedina48-pinTSOP(I),44-pinSOP,and48-ballFBGApackages.Thesedevicesaredesignedtobeprogrammedin-systemwit

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

MBM29LV800TE

8M(1Mx8/512Kx16)BIT

DESCRIPTION TheMBM29LV800TE/BEarea8M-bit,3.0V-onlyFlashmemoryorganizedas1Mbytesof8bitseachor512Kwordsof16bitseach.TheMBM29LV800TE/BEareofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackage.Thesedevicesaredesignedtobeprogrammedinasystemwithth

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

供应商型号品牌批号封装库存备注价格
AMD
22+
1440
原装现货假一赔十
询价
AMD
22+
N/A
354000
询价
AMD
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
AMD
23+
TSSOP
7635
全新原装优势
询价
AMD
2020+
TSOP48
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
AMD
22+
TSOP
8200
全新原装现货!自家库存!
询价
AMD
21+
TSSOP-48
23000
只做正品原装现货
询价
AMD
20+/21+
TSOP48
5600
全新原装进口诚信经营
询价
AMD
23+
SOP
12000
正品原装货价格低qq:2987726803
询价
AMTEL
749
742
原装正品
询价
更多AM29LV800DT内存芯片供应商 更新时间2024-5-20 15:24:00