AM29LV800D

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GeneralDescription TheAm29LV800Disan8Mbit,3.0volt-onlyFlashmemoryorganizedas1,048,576bytesor524,288words.Thedeviceisofferedin48-ballFBGA,44-pinSO,and48-pinTSOPpackages.Formoreinformation,refertopublicationnumber21536.Theword-widedata(x16)appearsonDQ1

AM29LV800DB-120

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GeneralDescription TheAm29LV800Disan8Mbit,3.0volt-onlyFlashmemoryorganizedas1,048,576bytesor524,288words.Thedeviceisofferedin48-ballFBGA,44-pinSO,and48-pinTSOPpackages.Formoreinformation,refertopublicationnumber21536.Theword-widedata(x16)appearsonDQ1

AM29LV800DB-120

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory;

General Description\nThe Am29LV800D is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. For more information, refer to publication number 21536. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device requires only a single, 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.Distinctive Characteristics\n■ Single power supply operation\n  — 2.7 to 3.6 volt read and write operations for battery-powered applications\n■ Manufactured on 0.23 µm process technology\n  — Compatible with 0.32 µm Am29LV800 device\n■ High performance\n  — Access times as fast as 70 ns\n■ Ultra low power consumption (typical values at 5 MHz)\n  — 200 nA Automatic Sleep mode current\n  — 200 nA standby mode current\n  — 7 mA read current\n  — 15 mA program/erase current\n■ Flexible sector architecture\n  — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte sectors (byte mode)\n  — One 8 Kword, two 4 Kword, one 16 Kword, and fifteen 32 Kword sectors (word mode)\n  — Supports full chip erase\n  — Sector Protection features:\n    A hardware method of locking a sector to prevent any program or erase operations within that sector\n    Sectors can be locked in-system or via programming equipment\n    Temporary Sector Unprotect feature allows code changes in previously locked sectors\n■ Unlock Bypass Program Command\n  — Reduces overall programming time when issuing multiple program command sequences\n■ Top or bottom boot block configurations available\n■ Embedded Algorithms\n  — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors\n  — Embedded Program algorithm automatically writes and verifies data at specified addresses\n■ Minimum 1 million write cycle guarantee per sector\n■ 20-year data retention at 125°C\n  — Reliable operation for the life of the system\n■ Package option\n  — 48-ball FBGA\n  — 48-pin TSOP\n  — 44-pin SO\n■ Compatibility with JEDEC standards\n  — Pinout and software compatible with single power supply Flash\n  — Superior inadvertent write protection\n■ Data# Polling and toggle bits\n  — Provides a software method of detecting program or erase operation completion\n■ Ready/Busy# pin (RY/BY#)\n  — Provides a hardware method of detecting program or erase cycle completion\n■ Erase Suspend/Erase Resume\n  — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation\n■ Hardware reset pin (RESET#)\n— Hardware method to reset the device to reading array data

AM29LV800DB-120EC

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GeneralDescription TheAm29LV800Disan8Mbit,3.0volt-onlyFlashmemoryorganizedas1,048,576bytesor524,288words.Thedeviceisofferedin48-ballFBGA,44-pinSO,and48-pinTSOPpackages.Formoreinformation,refertopublicationnumber21536.Theword-widedata(x16)appearsonDQ1

AM29LV800DB-120ED

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GeneralDescription TheAm29LV800Disan8Mbit,3.0volt-onlyFlashmemoryorganizedas1,048,576bytesor524,288words.Thedeviceisofferedin48-ballFBGA,44-pinSO,and48-pinTSOPpackages.Formoreinformation,refertopublicationnumber21536.Theword-widedata(x16)appearsonDQ1

AM29LV800DB-120EF

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GeneralDescription TheAm29LV800Disan8Mbit,3.0volt-onlyFlashmemoryorganizedas1,048,576bytesor524,288words.Thedeviceisofferedin48-ballFBGA,44-pinSO,and48-pinTSOPpackages.Formoreinformation,refertopublicationnumber21536.Theword-widedata(x16)appearsonDQ1

AM29LV800DB-120EI

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GeneralDescription TheAm29LV800Disan8Mbit,3.0volt-onlyFlashmemoryorganizedas1,048,576bytesor524,288words.Thedeviceisofferedin48-ballFBGA,44-pinSO,and48-pinTSOPpackages.Formoreinformation,refertopublicationnumber21536.Theword-widedata(x16)appearsonDQ1

AM29LV800DB-120FC

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GeneralDescription TheAm29LV800Disan8Mbit,3.0volt-onlyFlashmemoryorganizedas1,048,576bytesor524,288words.Thedeviceisofferedin48-ballFBGA,44-pinSO,and48-pinTSOPpackages.Formoreinformation,refertopublicationnumber21536.Theword-widedata(x16)appearsonDQ1

AM29LV800DB-120FD

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GeneralDescription TheAm29LV800Disan8Mbit,3.0volt-onlyFlashmemoryorganizedas1,048,576bytesor524,288words.Thedeviceisofferedin48-ballFBGA,44-pinSO,and48-pinTSOPpackages.Formoreinformation,refertopublicationnumber21536.Theword-widedata(x16)appearsonDQ1

AM29LV800DB-120FF

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GeneralDescription TheAm29LV800Disan8Mbit,3.0volt-onlyFlashmemoryorganizedas1,048,576bytesor524,288words.Thedeviceisofferedin48-ballFBGA,44-pinSO,and48-pinTSOPpackages.Formoreinformation,refertopublicationnumber21536.Theword-widedata(x16)appearsonDQ1