首页 >29LV800TE>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

29LV800TE

8M (1M x 8/512 K x 16) BIT

DESCRIPTION TheMBM29LV800TE/BEarea8M-bit,3.0V-onlyFlashmemoryorganizedas1Mbytesof8bitseachor512Kwordsof16bitseach.TheMBM29LV800TE/BEareofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackage.Thesedevicesaredesignedtobeprogrammedinasystemwithth

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

29LV800BE

8M(1Mx8/512Kx16)BIT

DESCRIPTION TheMBM29LV800TE/BEarea8M-bit,3.0V-onlyFlashmemoryorganizedas1Mbytesof8bitseachor512Kwordsof16bitseach.TheMBM29LV800TE/BEareofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackage.Thesedevicesaredesignedtobeprogrammedinasystemwithth

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

AM29LV800B

8Megabit(1Mx8-Bit/512Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV800Bisan8Mbit,3.0volt-onlyFlashmemoryorganizedas1,048,576bytesor524,288words.Thedeviceisofferedin48-ballFBGA,44-pinSO,and48-pinTSOPpackages.Theword-widedata(x16)appearsonDQ15–DQ0;thebyte-wide(x8)dataappearsonDQ7–DQ0.Thisdev

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AM29LV800B

8Megabit(1Mx8-Bit/512Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AM29LV800B

8Megabit(1Mx8-Bit/512Kx16-Bit)CMOS3.0Volt-only,BootSectorFlashMemory-DieRevision2

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AM29LV800D

8Megabit(1Mx8-Bit/512Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GeneralDescription TheAm29LV800Disan8Mbit,3.0volt-onlyFlashmemoryorganizedas1,048,576bytesor524,288words.Thedeviceisofferedin48-ballFBGA,44-pinSO,and48-pinTSOPpackages.Formoreinformation,refertopublicationnumber21536.Theword-widedata(x16)appearsonDQ1

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AM29LV800T

8Megabit(1,048,576x8-Bit/524,288x16-Bit)CMOS3.0Volt-only,SectoredFlashMemory

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AS29LV800

3V1M횞8/512K횞16CMOSFlashEEPROM

Functionaldescription TheAS29LV800isan8megabit,3.0voltFlashmemoryorganizedas1Megabyteof8bits/512Kbytesof16bitseach.Forflexibleeraseandprogramcapability,the8megabitsofdataisdividedintonineteensectors:one16K,two8K,one32K,andfifteen64kbytesectors;or

ANADIGICS

ANADIGICS

EN29LV800

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV800isan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin10µs.TheEN29LV800features3.0Vvoltagereadandwriteoperation,withaccesstimesasfastas5

EON

Eon Silicon Solution Inc.

EN29LV800A

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5

EON

Eon Silicon Solution Inc.

EN29LV800B

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

EON

Eon Silicon Solution Inc.

EN29LV800C

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemory

GENERALDESCRIPTION TheEN29LV800Cisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Cfeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas7

EON

Eon Silicon Solution Inc.

ES29LV800D

8Mbit(1Mx8/512Kx16)CMOS3.0Volt-only,BootSectorFlashMemory

EXCELSEMIExcel Semiconductor Inc.

Excel Semiconductor Inc.

ES29LV800E

8Mbit(1Mx8/512Kx16)CMOS3.0Volt-only,BootSectorFlashMemory

EXCELSEMIExcel Semiconductor Inc.

Excel Semiconductor Inc.

HY29LV800

8Mbit(1Mx8/512Kx16)LowVoltageFlashMemory

HynixHynix Semiconductor

SK海力士海力士半导体

M29LV800B

8Megabit(1Mx8-Bit/512Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV800Bisan8Mbit,3.0volt-onlyFlashmemoryorganizedas1,048,576bytesor524,288words.Thedeviceisofferedin48-ballFBGA,44-pinSO,and48-pinTSOPpackages.Theword-widedata(x16)appearsonDQ15–DQ0;thebyte-wide(x8)dataappearsonDQ7–DQ0.Thisdev

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

MBM29LV800BA

8M(1MX8/512KX16)BIT

■GENERALDESCRIPTION TheMBM29LV800TA/BAarea8M-bit,3.0V-onlyFlashmemoryorganizedas1Mbytesof8bitseachor512Kwordsof16bitseach.TheMBM29LV800TA/BAareofferedina48-pinTSOP(I),44-pinSOP,and48-ballFBGApackages.Thesedevicesaredesignedtobeprogrammedin-systemwit

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

MBM29LV800BE

8M(1Mx8/512Kx16)BIT

DESCRIPTION TheMBM29LV800TE/BEarea8M-bit,3.0V-onlyFlashmemoryorganizedas1Mbytesof8bitseachor512Kwordsof16bitseach.TheMBM29LV800TE/BEareofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackage.Thesedevicesaredesignedtobeprogrammedinasystemwithth

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

MBM29LV800TA

8M(1MX8/512KX16)BIT

■GENERALDESCRIPTION TheMBM29LV800TA/BAarea8M-bit,3.0V-onlyFlashmemoryorganizedas1Mbytesof8bitseachor512Kwordsof16bitseach.TheMBM29LV800TA/BAareofferedina48-pinTSOP(I),44-pinSOP,and48-ballFBGApackages.Thesedevicesaredesignedtobeprogrammedin-systemwit

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

MBM29LV800TE

8M(1Mx8/512Kx16)BIT

DESCRIPTION TheMBM29LV800TE/BEarea8M-bit,3.0V-onlyFlashmemoryorganizedas1Mbytesof8bitseachor512Kwordsof16bitseach.TheMBM29LV800TE/BEareofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackage.Thesedevicesaredesignedtobeprogrammedinasystemwithth

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

详细参数

  • 型号:

    29LV800TE

  • 制造商:

    FUJITSU

  • 制造商全称:

    Fujitsu Component Limited.

  • 功能描述:

    8M(1M x 8/512 K x 16) BIT

供应商型号品牌批号封装库存备注价格
FUJITSU
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FUJITSU
23+
TSOP48
9280
价格优势、原装现货、客户至上。欢迎广大客户来电查询
询价
FUJITSU
21+
TSOP48
12588
原装正品,自己库存 假一罚十
询价
23+
N/A
37860
正品授权货源可靠
询价
富士通
1907+
TSSOP
5520
只有现货原装!特价支持实单!实单请来电说明
询价
MALAYSIA
23+
TSOP
20000
原厂原装正品现货
询价
MALAYSIA
2023+
TSOP
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
MALAYSIA
21+
TSOP
35210
一级代理/放心采购
询价
MALAYSIA
22+
TSOP
360000
进口原装房间现货实库实数
询价
MALAYSIA
1922+
TSOP
9865
原装进口现货库存专业工厂研究所配单供货
询价
更多29LV800TE供应商 更新时间2024-4-23 14:51:00