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AM29LV400BB70REC

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

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AM29LV400BB70RECB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM29LV400BB70REE

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM29LV400BB70REEB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM29LV400BB70REI

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM29LV400BB70REIB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM29LV400BB70RFC

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM29LV400BB70RFCB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM29LV400BB70RFE

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM29LV400BB70RFEB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM29LV400BB70RFI

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM29LV400BB70RFIB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM29LV400BB70RSC

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM29LV400BB70RSCB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM29LV400BB70RSE

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM29LV400BB70RSEB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM29LV400BB70RSI

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM29LV400BB70RSIB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM29LV400BB70RWAC

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM29LV400BB70RWACB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

供应商型号品牌批号封装库存备注价格
D/C
23+
DC
35200
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
SN
22+
NA
30000
原装现货假一罚十
询价
AMD
24+
TSOP48
900
原装正品,假一罚十!
询价
amd
24+
N/A
6980
原装现货,可开13%税票
询价
AMD
2006
219
原装正品长期供货,如假包赔包换 徐小姐13714450367
询价
AMD
23+
589610
新到现货 原厂一手货源 价格秒杀代理!
询价
amd
2023+
原厂封装
50000
原装现货
询价
AMD
2015+
TSOP48
19889
一级代理原装现货,特价热卖!
询价
AMD
23+
TSSOP
5000
原装正品,假一罚十
询价
AMD
23+
TSSOP48
7635
全新原装优势
询价
更多AM29LV400BB70EF供应商 更新时间2024-9-24 14:49:00