S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM2729-110 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR. L

文件：61.89 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM2729-125 device is a high power silicon bipolar NPN transistor specifically designed for medium pulse S-Band radar output and driver applications. This device is characterized at 50 µsec pulse width and 10 duty cycle, but is capable of operation over a range of pulse widths, du

文件：109.88 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

ST

意法半导体

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

ST

意法半导体