AM2729-125中文资料意法半导体数据手册PDF规格书

DESCRIPTION

The AM2729-125 device is a high power silicon bipolar NPN transistor specifically designed for medium pulse S-Band radar output and driver applications.

This device is characterized at 50 µsec pulse width and 10 duty cycle, but is capable of operation over a range of pulse widths, duty cycles and temperatures. Low RF thermal resistance, refractory/gold metallization and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).

The AM2729-125 is supplied in the BIGPAC™ Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications.

■ REFRACTORY/GOLD METALLIZATION

■ EMITTER SITE BALLASTED

■ LOW THERMAL RESISTANCE

■ INPUT/OUTPUT MATCHING

■ OVERLAY GEOMETRY

■ METAL/CERAMIC HERMETIC PACKAGE

■ POUT = 125 W MIN. WITH 7.0 dB GAIN