RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM2729-125 device is a high power silicon bipolar NPN transistor specifically designed for medium pulse S-Band radar output and driver applications. This device is characterized at 50 µsec pulse width and 10 duty cycle, but is capable of operation over a range of pulse widths, du

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STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

ST

意法半导体

125 Watts, 36 Volts, 100us, 10 Radar 2700-2900 MHz

GENERAL DESCRIPTION The 2729-125 is an internally matched, COMMON BASE bipolar transistor capable of providing 125 Watts of pulsed RF output power at 100µs pulse width, 10 duty factor across the 2700 to 2900 MHz band. The transistor prematch and test fixture has been optimized through the use of

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ADPOW

DIP32

AMD

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CDIP32

AMD

超威半导体

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