AAT3221IJS-2.5-T1

Marking：AKXYY；Package：SC70JW-8；150 mA NanopowerTM LDO Linear Regulator

Features •Quiescentcurrent:1.1μA •Lowdropout:200mV(typical) •Guaranteedoutput:150mA •Highaccuracy:±2 •Currentlimitprotection •Over-temperatureprotection •Extremelylowpowershutdownmode •Lowtemperaturecoefficient •Factory-programmedoutputvoltages:1.5Vto3.

AIKB15N65DF5

Marking：AK15EDF5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti-parallel diode

FeaturesandBenefits: HighspeedF5technologyoffering: •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •Dynamicallystre

AIKB15N65DH5

Marking：AK15EDH5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti-parallel diode

FeaturesandBenefits: HighspeedH5technologyoffering: •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode

AIKB30N65DF5

Marking：AK30EDF5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode

FeaturesandBenefits: HighspeedF5technologyoffering: •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •Dynamicallystre

AIKB30N65DH5

Marking：AK30EDH5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti-parallel diode

FeaturesandBenefits: HighspeedH5technologyoffering: •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode

AIKB40N65DF5

Marking：AK40EDF5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode

FeaturesandBenefits: HighspeedF5technologyoffering: •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •Dynamicallystre

AIKB40N65DH5

Marking：AK40EDH5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode

FeaturesandBenefits: HighspeedH5technologyoffering: •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode

AIKB50N65DF5

Marking：AK50EDF5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode

FeaturesandBenefits: HighspeedF5technologyoffering: •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •Dynamicallystre

AIKB50N65DH5

Marking：AK50EDH5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode

FeaturesandBenefits: HighspeedH5technologyoffering: .Best-in-Classefficiencyinhardswitchingandresonant topologies .PlugandplayreplacementofpreviousgenerationIGBTs .650Vbreakdownvoltage .LowgatechargeQG .IGBTcopackedwithRAPID1fastandsoftantiparalleldiode

AIKQ120N75CP2

Marking：AKQ12FCP；Package：PG-TO247PLUS-3；EDT2 IGBT and emitter controlled diode in TO247PLUS package

Features •VCE=750V •IC=120A •750Vcollector-emitterblockingvoltagecapability •Suitablefor470VVDCsystemsandincreaseovervoltagemarginfor400VVDCsystems •VerylowVCE(sat),1.30VatICnom=120A,25°C •Shortcircuitrobusttsc=5μsatVCE=470V,VGE=15V •