型号：SSM6J422TU；Package：UF6；MOSFETs Silicon P-Channel MOS

1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 99.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 67.8 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 51.4 mΩ (m

文件：290.63 Kbytes 页数：9 Pages

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型号：SSM6J422TULF；Package：UF6；MOSFETs Silicon P-Channel MOS

1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 99.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 67.8 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 51.4 mΩ (m

文件：290.63 Kbytes 页数：9 Pages

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型号：SSM6J422TULXGF；Package：UF6；MOSFETs Silicon P-Channel MOS

1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 99.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 67.8 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 51.4 mΩ (m

文件：290.63 Kbytes 页数：9 Pages

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型号：SSM6J422TULXHF；Package：UF6；MOSFETs Silicon P-Channel MOS

1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 99.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 67.8 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 51.4 mΩ (m

文件：290.63 Kbytes 页数：9 Pages

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型号：MPM3810GQB-33；Package：QFN-12；6V Input, 1.2A Module Synchronous Step-Down Converter with Integrated Inductor

文件：902.42 Kbytes 页数：17 Pages

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型号：SSM6J422TU；Package：UF6；MOSFETs Silicon P-Channel MOS (U-MOS??

文件：295.63 Kbytes 页数：9 Pages

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