丝印：AJT；Package：DO-219；SURFACE MOUNT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS

FEATURES • For surface mounted applications • Reliable low cost construction utilizing molded plastic technique • Plastic material has UL flammability classification 94V-O • Typical IR less than 1uA above 10V • Fast response time: typically less than 1.0ns for Uni-direction. • RoHS complian

文件：517.169 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：AJT；Package：TSOT23-8；High-Efficiency, 3A, 16V, 500kHz Synchronous, Step-Down Converter

文件：500.61 Kbytes 页数：15 Pages

MPS

美国芯源

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AJT006 is Designed for 9 – 1215 MHz, JTIDS Applications. FEATURES: • Internal Input/Output Matching Network • PG = 9.3 dB at 6.0 W/1215 MHz • Omnigold™ Metalization System

文件：17.5 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AJT015 is Designed for FEATURES: • Input Matching Network •·Omnigold™ Metalization System

文件：17.71 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AJT030 is Designed for FEATURES: • Input Matching Network • Omnigold™ Metalization System

文件：17.94 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AJT085 is an RF power transistor, designed for pulsed avionics applications with high duty cycle. FEATURES: • 960-1215 MHz • Internal Input/Output Matching Network • PG = 7.5 dB at 85 W/ 1215 MHz • Omnigold™ Metalization System

文件：17.61 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AJT150 is Designed for FEATURES: ● Input Matching Network ● Omnigold™ Metalization System

文件：17.87 Kbytes 页数：1 Pages

ASI

Side entry, shielded, LED, thru hole modular jack

文件：87.3 Kbytes 页数：1 Pages

METZ

Side entry, shielded, thru hole modular jack

文件：60.43 Kbytes 页数：1 Pages

METZ