首页 >AIR720GIMINIPCI-E>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NPNhigh-voltagetransistors FEATURES •Lowfeedbackcapacitance. APPLICATIONS •Class-Bvideooutputstagesofcolourtelevision receivers •Generalpurposehighvoltagecircuits. DESCRIPTION NPNtransistorsinaSOT223plasticpackage. PNPcomplement:BF723. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
LowNoiseSiliconGermaniumBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CHeterojunctionWidebandRFBipolarTransistor ProductBrief TheBFP720isaverylownoisewidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4VandcurrentsuptoIC=25mA.Thed | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
RobustHighPerformanceLowNoiseBipolarRFTransistor ProductBrief TheBFP720ESDisaSiliconGermaniumCarbon(SiGe:C)NPNHeterojunctionwidebandBipolarRFTransistor(HBT)inaplasticdualemitterstandardpackagewithvisibleleads.Thedeviceisfittedwithinternalprotectioncircuits,whichenhancerobustnessagainstESDandhighRFinput | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CHeterojunctionWidebandRFBipolarTransistor ProductBrief TheBFP720FisaverylownoisewidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4.0VandcurrentsuptoIC=25mA.Th | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
LowNoiseSiliconGermaniumBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
RobustLowNoiseSiliconGermaniumBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
RobustHighPerformanceLowNoiseBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
ULTRA-FASTRECOVERYApproximately25AMPERESSINGLE-PHASE,FULL-WAVEBRIDGES | edi edi | edi | ||
Veryfasthigh-voltagesoft-recoveryrectifiers DESCRIPTION Ruggedglasspackage,usingahightemperaturealloyedconstruction. Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched. Thepackageisdesignedtobeusedinaninsulatingmediumsuchasresin,oilorSF6gas. FEATU | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
Veryfasthigh-voltagesoft-recoveryrectifiers | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
rohscompliant | TAOGLAS Taoglas antenna solutions | TAOGLAS | ||
TaoglasCableAssemblyHiroseU.FLtoSMA(F)BulkheadStraightConnectorwith200mm1.32cable | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
TaoglasCableAssemblyHiroseU.FLtoSMA(F)BulkheadStraightConnectorwith200mm??.32cable | TAOGLAS Taoglas antenna solutions | TAOGLAS | ||
Oliviaseries | CreeCree Inc. 科锐科锐半导体制造商 | Cree | ||
ANGELAseries | CreeCree Inc. 科锐科锐半导体制造商 | Cree | ||
Winnieseries | CreeCree Inc. 科锐科锐半导体制造商 | Cree | ||
Winnieseries | CreeCree Inc. 科锐科锐半导体制造商 | Cree | ||
SmallSignalTransistorPNP-HighCurrentTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize22x22MILS DieThickness9.0MILS BaseBondingPadArea5.7X4.0MILS EmitterBondingPadArea5.3X4.0MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
PNPSILICONPLANARSWITCHINGTRANSISTOR | CDIL CDIL | CDIL |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LUAT |
23+ |
51303.6M |
7500 |
大批量供应优势库存热卖 |
询价 | ||
Luat(合宙) |
21+ |
NA |
6000 |
中国航天工业部战略合作伙伴行业领导者 |
询价 | ||
23+ |
N/A |
58800 |
一级代理放心采购 |
询价 | |||
Luat(合宙) |
23+ |
SMD,29x32mm |
6000 |
诚信服务，绝对原装原盘 |
询价 | ||
Luat/上海合宙通信 |
23+ |
NA |
200 |
现货!就到京北通宇商城 |
询价 | ||
Luat/上海合宙通信 |
23+ |
NA |
200 |
现货!就到京北通宇商城 |
询价 | ||
N/A |
23+ |
80000 |
专注配单,只做原装进口现货 |
询价 | |||
N/A |
23+ |
80000 |
专注配单,只做原装进口现货 |
询价 | |||
LUAT合宙 |
2021+ |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | |||
CISCO |
新 |
1 |
全新原装 货期两周 |
询价 |
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