World-class low-cost power for fast-switching applications in small SMD packages

Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/ • TRENCHSTOP™ 5 technology with low VCEsat, optimized as F5 variant (Highest Efficiency Variant) for highest possible switching speed\n• 650V break-down voltage, 30A nominal current\n• Very fast switching (up to 150kHz)\n• Automotive qualified in accordance to Infineon quality standards\n• Max junct;

Infineon

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丝印：AG30EF5；Package：PG-TO263-3；High speed FAST IGBT in TRENCHSTOPTM 5 technology

Features and Benefits: High speed F5 technology offering: • Best-in-Class efficiency in hard switching and resonant topologies • 650V breakdown voltage • Low gate charge QG • Maximum junction temperature 175°C • Dynamically stress tested • Qualified according to AEC-Q101 • Green package (

文件：1.48487 Mbytes 页数：14 Pages

Infineon

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Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：DISCRETE SWITCHES

Infineon

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650V IGBT high speed switching series fifth generation

文件：1.9361 Mbytes 页数：14 Pages

Infineon

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High speed 5 FAST IGBT in TRENCHSTOP™ 5 technology

FeaturesandBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freel

文件：1.93829 Mbytes 页数：14 Pages

Infineon

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IGBT copacked with RAPID 1 fast and soft antiparallel diode

文件：2.08119 Mbytes 页数：17 Pages

Infineon

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