GaN C-band High Power Amplifier

•4.4 ~ 5.6 GHz Bandwidth\n•29 dB Small Signal Gain\n•Package Type: QFN40 6x6;

ASB

GaN E-pHEMT Ku Band Power Amplifier MMIC

• 41 dBm Saturated Output Power\n• 28 % Power Added Efficiency\n• 18.5 dB Small Signal Gain\n• 43 dBm Output Third Order Intercept Point\n• Bias: VDD = +28 V, IDD = 350 mA, VGG = -2.8 V (Typical)\n• Lead-free/Green/RoHS-compliant Package\n• Package Type: 10 lead Flange;

ASB

GaN Ku-band High Power Amplifier

•13.0 ~ 16.5 GHz Bandwidth\n•41 dBm (12 W) Saturated Output Power (CW)\n•13.5 dB Power Gain\n•23 dB Small Signal Gain\n•Lead-free/Green/RoHS-compliant Package\n•Package Type: Die;

ASB

包装：管件 类别：继电器 信号继电器，高达 2 A 描述：RELAY TELECOM DPDT 1A 3VDC

Panasonic Electric Works

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：继电器 信号继电器，高达 2 A 描述：RELAY TELECOM DPDT 1A 6VDC

Panasonic Electric Works

包装：管件 类别：继电器 信号继电器，高达 2 A 描述：RELAY TELECOM DPDT 1A 6VDC

Panasonic Electric Works