AGM4832C

LCD MODULE

MECHANICALDATA

AGM4832D

LCDMODULE

LCDMODULE

AM4832N

N-Channel30-V(D-S)MOSFET

AO4832

Common-DrainDualN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4832usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO4832isPb-free(meetsROHS&Sony259sp

AO4832

N-Channel0-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch

AO4832

30VDualN-ChannelMOSFET

AO4832

DualN-ChannelMOSFET

■Features ●VDS(V)=30V ●ID=10A(VGS=10V) ●RDS(ON)

AO4832

DualN-ChannelEnhancementModePowerMOSFET

RDs(ON)=16mQ@VGS=10V RDS(ON)=20mQ@VGS=4.5V SuperhighdensitycelldesignforextremelylowRDs(ON) Exceptionalon-resistanceandmaximumDCcurrent capability

AO4832

30VN-ChannelMOSFET

ProductSummary VDS30V ID(atVGS=10V)10A RDS(ON)(atVGS=10V)

AO4832

30VDualN-ChannelMOSFET

GeneralDescription TheAO4832usesadvancedtrenchtechnologytoprovide excellentRDS(ON)withlowgatecharge. ThisdeviceissuitableforhighsideswitchinSMPSand generalpurposeapplications. ProductSummary VDS30V ID(atVGS=10V)10A RDS(ON)(atVGS=10V)