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AGM30P25MBP

12-300V PP MOSFET

AGMsemi

芯控源

NCE30P25BQ

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P25BQ uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. Application ● PWM applications ● Load switch ● Power management General Features ● VDS = -30V,ID = -25A RDS(O

文件:740.37 Kbytes 页数:7 Pages

NCEPOWER

新洁能

NCE30P25Q

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P25Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -25A RDS(ON)

文件:687.05 Kbytes 页数:9 Pages

NCEPOWER

新洁能

NCE30P25S

P-Channel 30 V (D-S) MOSFET

文件:1.04242 Mbytes 页数:9 Pages

VBSEMI

微碧半导体

技术参数

  • Technology:

    Trench

  • Package:

    PDFN3.3*3.3

  • Polarity:

    PP

  • Bvdss(V):

    -30

  • VGS(V):

    ±20

  • ID(A):

    -1.2~-2.2

  • VTH(V):

    -8

  • RDS(ON)@10VTyp(mπ):

    20

  • RDS(ON)@4.5VTyp(mπ):

    29

  • CLSS_Typ(pF):

    652

  • COSS_Typ(pF):

    95

  • CRSS_Typ(pF):

    85.7

供应商型号品牌批号封装库存备注价格
24+
N/A
75000
一级代理-主营优势-实惠价格-不悔选择
询价
NK/南科功率
2025+
WQFN3X3
99988
国产场效应管
询价
HAMOS/汉姆
24+
PDFN5060
60000
全新原装现货
询价
更多AGM30P25MBP供应商 更新时间2025-11-17 11:06:00