AFN4906W数据表ic资料批发供应闸能Alfa-MOS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
AFN4906W	文件：300 bytes Page：1 Pages	Trench Power MOSFET	Alfa-MOS 闸能	Alfa-MOS
AFN4906WS8RG	文件：1.08431 Mbytes Page：9 Pages	Dual N-Channel 60 V (D-S) 175 째C MOSFET 文件：1.08431 Mbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI
AO4906	文件：123.88 Kbytes Page：5 Pages	Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4906 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous 文件：123.88 Kbytes 页数：5 Pages	AOSMD 万国半导体	AOSMD
AO4906	文件：1.78577 Mbytes Page：5 Pages	Dual N-Channel MOSFET ■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON) 文件：1.78577 Mbytes 页数：5 Pages	KEXIN 科信电子	KEXIN
AO4906L	文件：123.88 Kbytes Page：5 Pages	Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4906 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous 文件：123.88 Kbytes 页数：5 Pages	AOSMD 万国半导体	AOSMD

更多AFN4906W供应商更新时间2025-11-17 15:08:00