Trench Power MOSFET

Alfa-MOS

闸能

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AON3814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load swi

文件：127.44 Kbytes 页数：4 Pages

AOSMD

万国半导体

20V N-Channel MOSFET

文件：375.26 Kbytes 页数：5 Pages

AOSMD

万国半导体

NetShelter AV 24U 600mm Wide x 825mm Deep Enclosure with Sides and 10-32 Threaded Rails Black

文件：89.51 Kbytes 页数：2 Pages

SCHNEIDER

施耐德