Ka Band Power GaAs MESFET Chip

Description The AFM06P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 600 µm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscilla

文件：19.28 Kbytes 页数：3 Pages

ALPHA

Ka Band Power GaAs MESFET Chips

Description The AFM06P3-212, 213 are high performance power GaAs MESFET chips in an industry standard ceramic micro-x package, having a gate length of 0.25 µm and a total gate periphery of 600 µm. These devices have excellent gain and power performance through 26 GHz, making them suitable for a w

文件：25.51 Kbytes 页数：3 Pages

ALPHA

Ka Band Power GaAs MESFET Chips

Description The AFM06P3-212, 213 are high performance power GaAs MESFET chips in an industry standard ceramic micro-x package, having a gate length of 0.25 µm and a total gate periphery of 600 µm. These devices have excellent gain and power performance through 26 GHz, making them suitable for a w

文件：25.51 Kbytes 页数：3 Pages

ALPHA

Ka Band Power GaAs MESFET Chip

Description The AFM08P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 800 µm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscilla

文件：19.4 Kbytes 页数：3 Pages

ALPHA

ADAPTIVE FUZZY MODELLER

DESCRIPTION Adaptive Fuzzy Modeller (AFM) is a tool that easily allows to obtain a model of a system based on Fuzzy Logic data structure, starting from the sampling of a process/function expressed in terms of InputOutput values pairs (patterns). Its primary capability is the automatic generation

文件：89.89 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

CON,F-TYPE MALE RG58 CABLE

ELECTRICAL IMPEDANCE: 50 OHMS VOLTAGE RATING: 500 VOLTS PEAK FREQUENCY RANGE: DC ~ 2 GHz DIELECTRIC WITHSTANDING VOLTAGE: 1000 VOLTS RMS INSERTION LOSS: .20dB MAX. CABLE RETENTION: 30 POUNDS PULL MISCELLANEOUS: CONNECTOR SHALL BE INDIVIDUALLY PACKAGED IN ACCORDANCE WITH L-COM SPEC. PS-0

文件：51.92 Kbytes 页数：1 Pages

L-COM

英飞畅

Airfast RF Power LDMOS Transistor

Designed for handheld two−way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large−signal, common−source amplifier applications in handheld radio equipment. Features • Characterized for operation f

文件：195.94 Kbytes 页数：13 Pages

恩XP

Airfast RF Power LDMOS Transistor

Designed for handheld two−way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large−signal, common−source amplifier applications in handheld radio equipment. Features • Characterized for operation f

文件：195.94 Kbytes 页数：13 Pages

恩XP

CON,FME JACK CRIMP RG58/LMR195

ELECTRICAL: IMPEDANCE: 50 OHMS. FREQUENCY RANGE: 0-200 MHz. MISCELLANEOUS: ALL DIMENSIONS ARE FOR REFERENCE ONLY. COMPONENT SHALL BE INDIVIDUALLY PACKAGED IN ACCORDANCE WITH L-COM SPEC. PS-0031

文件：101.72 Kbytes 页数：1 Pages

L-COM

英飞畅

Ka Band Power GaAs MESFET

文件：25.62 Kbytes 页数：2 Pages

SKYWORKS

思佳讯