AFE4900YZR.A

AFE4900 Ultra-low Power, Integrated AFE for Wearable Optical, Electrical Bio-sensing with FIFO

1Features 1•SynchronizedPPG,ECGsignalacquisitionat dataratesupto1kHz •ECGsignalchain: –StandaloneECGacquisitionupto4kHz –Inputbias:1-leadECGwithRLDbias –ProgrammableINAgain:2.15to12.92 –Inputnoise(1Hzto150Hz):2.5μVrmsat 1kHz,1.25μVrmsat4-kH

AFE4900YZT

Ultra-LowPower,IntegratedAFEforWearableOptical,ElectricalBio-SensingWithFIFO

AFE4900YZT

AFE4900Ultra-lowPower,IntegratedAFEforWearableOptical,ElectricalBio-sensingwithFIFO

1Features 1•SynchronizedPPG,ECGsignalacquisitionat dataratesupto1kHz •ECGsignalchain: –StandaloneECGacquisitionupto4kHz –Inputbias:1-leadECGwithRLDbias –ProgrammableINAgain:2.15to12.92 –Inputnoise(1Hzto150Hz):2.5μVrmsat 1kHz,1.25μVrmsat4-kH

AFE4900YZT.A

AFE4900Ultra-lowPower,IntegratedAFEforWearableOptical,ElectricalBio-sensingwithFIFO

1Features 1•SynchronizedPPG,ECGsignalacquisitionat dataratesupto1kHz •ECGsignalchain: –StandaloneECGacquisitionupto4kHz –Inputbias:1-leadECGwithRLDbias –ProgrammableINAgain:2.15to12.92 –Inputnoise(1Hzto150Hz):2.5μVrmsat 1kHz,1.25μVrmsat4-kH

AO4900

DualN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4900usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThetwoMOSFETsmakeacompactandefficientswitchandsynchronousrectifiercombinationforuseinDC-DCconverters.ASchottkydiodeisco-packagedinparallelwiththesynchronou

AO4900

DualN-ChannelMOSFET

■Features ●VDS(V)=30V ●ID=6.9A(VGS=10V) ●RDS(ON)

AO4900A

DualN-ChannelEnhancementModeFieldEffectTransistorwithSchottkyDiode

GeneralDescription TheAO4900AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThetwoMOSFETsmakeacompactandefficientswitchandsynchronousrectifiercombinationforuseinDCDCconverters.ASchottkydiodeisco-packagedinparallelwiththesynchrono

AO4900AL

DualN-ChannelEnhancementModeFieldEffectTransistorwithSchottkyDiode

GeneralDescription TheAO4900AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThetwoMOSFETsmakeacompactandefficientswitchandsynchronousrectifiercombinationforuseinDCDCconverters.ASchottkydiodeisco-packagedinparallelwiththesynchrono

AO4900L

DualN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4900usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThetwoMOSFETsmakeacompactandefficientswitchandsynchronousrectifiercombinationforuseinDC-DCconverters.ASchottkydiodeisco-packagedinparallelwiththesynchronou

BA4900

Systempowersupplyforcarstereos

TheBA3918isasingle-chippowersupplyICforuseincaraudiosystems.One5.6Voutputforamicrocontroller,three8.7Voutputs,andtwooutputsinterlockedbyBACKUPandACCsystemsarebuiltin.