BF901R

Siliconn-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorsinplasticmicrominiatureSOT143andSOT143Renvelopes,withsourceandsubstrateinterconnected.TheyareintendedforUHFandVHFapplications,suchastelevisiontunersandprofessionalcommunicationsequipmentespeciallysuitedforlowvol

BLC901

Inter=SBC901

BTM901X

MOTIX™integratedfull-bridgeICBTM9010/BTM9011

Features •Pathresistanceoftyp.175mΩat25°C •Pulsecurrent: -5.2Afortpulse≤1sat85°C -4.2Afortpulse≤10sat85°C •Supplyvoltagerangefrom7Vto18V •Extendedsupplyvoltagerangefrom4.5Vto40V •Currentlimitationofmin.10A •Slewrateselection •Protec

BUZ901

N-CHANNELPOWERMOSFET

POWERMOSFETSFORAUDIOAPPLICATIONS FEATURES •HIGHSPEEDSWITCHING •N–CHANNELPOWERMOSFET •SEMEFABDESIGNEDANDDIFFUSED •HIGHVOLTAGE(160V&200V) •HIGHENERGYRATING •ENHANCEMENTMODE •INTEGRALPROTECTIONDIODE •P–CHANNELALSOAVAILABLEASBUZ905&

BUZ901

N-channelpowermosfet

BUZ901

N-CHANNELPOWERMOSFET

BUZ901D

iscN-ChannelMOSFETTransistor

BUZ901DP

N-CHANNELPOWERMOSFET

POWERMOSFETSFORAUDIOAPPLICATIONS FEATURES •HIGHSPEEDSWITCHING •N–CHANNELPOWERMOSFET •SEMEFABDESIGNEDANDDIFFUSED •HIGHVOLTAGE(160V&200V) •HIGHENERGYRATING •ENHANCEMENTMODE •INTEGRALPROTECTIONDIODE •P–CHANNELALSOAVAILABLEASBUZ905DP&am

BUZ901P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

CA901

17dB40-860MHzVHF/UHFCATV/MATVAMPLIFIERS

TheRFLine VHF/UHFCATVAmplifiers ...designedforbroadbandapplicationsrequiringlow–distortionamplification.SpecificallyintendedforCATV/MATVmarketrequirements.Theseamplifiersfeatureion–implantedarsenicemittertransistorsandanallgoldmetalsystem. •SpecifiedC