丝印：aE2；Package：SOT765-1；Low-power dual 2-input NAND Schmitt trigger

1. General description The 74AUP2G132 is a dual 2-input NAND gate with Schmitt-trigger inputs. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IO

文件：309.84 Kbytes 页数：21 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：aE2；Package：SOT833-1；Low-power dual 2-input NAND Schmitt trigger

1. General description The 74AUP2G132 is a dual 2-input NAND gate with Schmitt-trigger inputs. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IO

文件：309.84 Kbytes 页数：21 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：AE2；Package：SMB；600 W Transient Voltage Suppressor

1. General description 600 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMB Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits • Rated peak pulse power at 10/1000 μs waveform: PPPM = 600 W • Reverse standoff

文件：229.55 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：AE240；Package：SSOP；OCTAL BUFFER/LINE DRIVER WITH 3-STATE OUTPUTS

Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPIC (Enhanced-Performance Implanted CMOS) 1-
m Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (DW) and Shrink Small-

文件：420.85 Kbytes 页数：16 Pages

TI

德州仪器

丝印：AE240；Package：SSOP；OCTAL BUFFER/LINE DRIVER WITH 3-STATE OUTPUTS

Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPIC (Enhanced-Performance Implanted CMOS) 1-
m Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (DW) and Shrink Small-

文件：420.85 Kbytes 页数：16 Pages

TI

德州仪器

丝印：AE240；Package：TSSOP；OCTAL BUFFER/LINE DRIVER WITH 3-STATE OUTPUTS

Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPIC (Enhanced-Performance Implanted CMOS) 1-
m Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (DW) and Shrink Small-

文件：420.85 Kbytes 页数：16 Pages

TI

德州仪器

丝印：AE240；Package：TSSOP；OCTAL BUFFER/LINE DRIVER WITH 3-STATE OUTPUTS

Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPIC (Enhanced-Performance Implanted CMOS) 1-
m Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (DW) and Shrink Small-

文件：420.85 Kbytes 页数：16 Pages

TI

德州仪器

丝印：AE244；Package：SSOP；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

EPICE (Enhanced-Performance Implanted CMOS ) 1-mm Process 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Pin Configurations Minimize High-Speed Switching Noise 500-mA Typical Latch-Up Immunity at 12

文件：412.15 Kbytes 页数：15 Pages

TI

德州仪器

丝印：AE244；Package：SSOP；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

EPICE (Enhanced-Performance Implanted CMOS ) 1-mm Process 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Pin Configurations Minimize High-Speed Switching Noise 500-mA Typical Latch-Up Immunity at 12

文件：412.15 Kbytes 页数：15 Pages

TI

德州仪器

丝印：AE244；Package：TSSOP；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

EPICE (Enhanced-Performance Implanted CMOS ) 1-mm Process 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Pin Configurations Minimize High-Speed Switching Noise 500-mA Typical Latch-Up Immunity at 12

文件：412.15 Kbytes 页数：15 Pages

TI

德州仪器