丝印：AE244；Package：SSOP；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

EPICE (Enhanced-Performance Implanted CMOS ) 1-mm Process 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Pin Configurations Minimize High-Speed Switching Noise 500-mA Typical Latch-Up Immunity at 12

文件：412.15 Kbytes 页数：15 Pages

TI

德州仪器

丝印：AE244；Package：SSOP；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

EPICE (Enhanced-Performance Implanted CMOS ) 1-mm Process 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Pin Configurations Minimize High-Speed Switching Noise 500-mA Typical Latch-Up Immunity at 12

文件：412.15 Kbytes 页数：15 Pages

TI

德州仪器

丝印：AE244；Package：TSSOP；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

EPICE (Enhanced-Performance Implanted CMOS ) 1-mm Process 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Pin Configurations Minimize High-Speed Switching Noise 500-mA Typical Latch-Up Immunity at 12

文件：412.15 Kbytes 页数：15 Pages

TI

德州仪器

丝印：AE244；Package：TSSOP；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

EPICE (Enhanced-Performance Implanted CMOS ) 1-mm Process 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Pin Configurations Minimize High-Speed Switching Noise 500-mA Typical Latch-Up Immunity at 12

文件：412.15 Kbytes 页数：15 Pages

TI

德州仪器

丝印：AE244；Package：TSSOP；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

EPICE (Enhanced-Performance Implanted CMOS ) 1-mm Process 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Pin Configurations Minimize High-Speed Switching Noise 500-mA Typical Latch-Up Immunity at 12

文件：412.15 Kbytes 页数：15 Pages

TI

德州仪器